Amorphous carbon film deposition by laser induced C60 fragmentation

P. Heszler, J. O. Carlsson, J. Lu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

It is demonstrated that a pure carbon (fullerene) precursor, C60, is appropriate for laser-induced carbon film deposition. Amorphous carbon films were obtained on Si and SiO2 substrates upon ArF excimer laser induced fragmentation of gas phase C60. The depositions were performed in Ar and H2 ambient in a hot-wall reactor at 550 °C. Strong C2 emission bands were observed by optical emission spectroscopy during the deposition process indicating that C2 dimers are used for film formation, however, thermal decomposition of C58, C56, etc. high-mass fragments may also contribute to the layer development. Raman and TEM studies showed amorphous (highly disordered, turbostratic) character of the films. Optical absorption spectroscopy indicated semiconductor feature of the layers with optical band gap of 0.7 and 0.9 eV for the films deposited in Ar and H2 ambient, respectively. For the films deposited in H2 atmosphere, changes in the Raman spectrum and an upshift of the optical band gap of the layer indicate amorphous hydrogenated film with diamond-like character, however, degree of the sp3 hybridization was estimated to be low. The deposition rate was measured to be approximately 200 angstroms/min at 500 °C and 400 mJ/cm2 laser fluence. AFM measurements showed smooth films with low surface roughness, approximately 1 nm on 1 μm scale length.

Original languageEnglish
Title of host publicationApplied Surface Science
EditorsC.N. Afonso, E. Matthias, T. Szorenyi
Volume109-110
Publication statusPublished - Jan 1 1997
EventProceedings of the 1996 E-MRS Spring Conference - Strasbourg, Fr
Duration: Jun 4 1996Jun 7 1996

Other

OtherProceedings of the 1996 E-MRS Spring Conference
CityStrasbourg, Fr
Period6/4/966/7/96

Fingerprint

Carbon films
Amorphous carbon
Amorphous films
fragmentation
Lasers
carbon
lasers
Optical band gaps
Fullerenes
Optical emission spectroscopy
Diamond
Excimer lasers
Deposition rates
Absorption spectroscopy
Dimers
Light absorption
Raman scattering
Diamonds
optical emission spectroscopy
Pyrolysis

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films
  • Condensed Matter Physics

Cite this

Heszler, P., Carlsson, J. O., & Lu, J. (1997). Amorphous carbon film deposition by laser induced C60 fragmentation. In C. N. Afonso, E. Matthias, & T. Szorenyi (Eds.), Applied Surface Science (Vol. 109-110)

Amorphous carbon film deposition by laser induced C60 fragmentation. / Heszler, P.; Carlsson, J. O.; Lu, J.

Applied Surface Science. ed. / C.N. Afonso; E. Matthias; T. Szorenyi. Vol. 109-110 1997.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Heszler, P, Carlsson, JO & Lu, J 1997, Amorphous carbon film deposition by laser induced C60 fragmentation. in CN Afonso, E Matthias & T Szorenyi (eds), Applied Surface Science. vol. 109-110, Proceedings of the 1996 E-MRS Spring Conference, Strasbourg, Fr, 6/4/96.
Heszler P, Carlsson JO, Lu J. Amorphous carbon film deposition by laser induced C60 fragmentation. In Afonso CN, Matthias E, Szorenyi T, editors, Applied Surface Science. Vol. 109-110. 1997
Heszler, P. ; Carlsson, J. O. ; Lu, J. / Amorphous carbon film deposition by laser induced C60 fragmentation. Applied Surface Science. editor / C.N. Afonso ; E. Matthias ; T. Szorenyi. Vol. 109-110 1997.
@inproceedings{7ba1bb3d25d34c2ba14f71081d4f54cc,
title = "Amorphous carbon film deposition by laser induced C60 fragmentation",
abstract = "It is demonstrated that a pure carbon (fullerene) precursor, C60, is appropriate for laser-induced carbon film deposition. Amorphous carbon films were obtained on Si and SiO2 substrates upon ArF excimer laser induced fragmentation of gas phase C60. The depositions were performed in Ar and H2 ambient in a hot-wall reactor at 550 °C. Strong C2 emission bands were observed by optical emission spectroscopy during the deposition process indicating that C2 dimers are used for film formation, however, thermal decomposition of C58, C56, etc. high-mass fragments may also contribute to the layer development. Raman and TEM studies showed amorphous (highly disordered, turbostratic) character of the films. Optical absorption spectroscopy indicated semiconductor feature of the layers with optical band gap of 0.7 and 0.9 eV for the films deposited in Ar and H2 ambient, respectively. For the films deposited in H2 atmosphere, changes in the Raman spectrum and an upshift of the optical band gap of the layer indicate amorphous hydrogenated film with diamond-like character, however, degree of the sp3 hybridization was estimated to be low. The deposition rate was measured to be approximately 200 angstroms/min at 500 °C and 400 mJ/cm2 laser fluence. AFM measurements showed smooth films with low surface roughness, approximately 1 nm on 1 μm scale length.",
author = "P. Heszler and Carlsson, {J. O.} and J. Lu",
year = "1997",
month = "1",
day = "1",
language = "English",
volume = "109-110",
editor = "C.N. Afonso and E. Matthias and T. Szorenyi",
booktitle = "Applied Surface Science",

}

TY - GEN

T1 - Amorphous carbon film deposition by laser induced C60 fragmentation

AU - Heszler, P.

AU - Carlsson, J. O.

AU - Lu, J.

PY - 1997/1/1

Y1 - 1997/1/1

N2 - It is demonstrated that a pure carbon (fullerene) precursor, C60, is appropriate for laser-induced carbon film deposition. Amorphous carbon films were obtained on Si and SiO2 substrates upon ArF excimer laser induced fragmentation of gas phase C60. The depositions were performed in Ar and H2 ambient in a hot-wall reactor at 550 °C. Strong C2 emission bands were observed by optical emission spectroscopy during the deposition process indicating that C2 dimers are used for film formation, however, thermal decomposition of C58, C56, etc. high-mass fragments may also contribute to the layer development. Raman and TEM studies showed amorphous (highly disordered, turbostratic) character of the films. Optical absorption spectroscopy indicated semiconductor feature of the layers with optical band gap of 0.7 and 0.9 eV for the films deposited in Ar and H2 ambient, respectively. For the films deposited in H2 atmosphere, changes in the Raman spectrum and an upshift of the optical band gap of the layer indicate amorphous hydrogenated film with diamond-like character, however, degree of the sp3 hybridization was estimated to be low. The deposition rate was measured to be approximately 200 angstroms/min at 500 °C and 400 mJ/cm2 laser fluence. AFM measurements showed smooth films with low surface roughness, approximately 1 nm on 1 μm scale length.

AB - It is demonstrated that a pure carbon (fullerene) precursor, C60, is appropriate for laser-induced carbon film deposition. Amorphous carbon films were obtained on Si and SiO2 substrates upon ArF excimer laser induced fragmentation of gas phase C60. The depositions were performed in Ar and H2 ambient in a hot-wall reactor at 550 °C. Strong C2 emission bands were observed by optical emission spectroscopy during the deposition process indicating that C2 dimers are used for film formation, however, thermal decomposition of C58, C56, etc. high-mass fragments may also contribute to the layer development. Raman and TEM studies showed amorphous (highly disordered, turbostratic) character of the films. Optical absorption spectroscopy indicated semiconductor feature of the layers with optical band gap of 0.7 and 0.9 eV for the films deposited in Ar and H2 ambient, respectively. For the films deposited in H2 atmosphere, changes in the Raman spectrum and an upshift of the optical band gap of the layer indicate amorphous hydrogenated film with diamond-like character, however, degree of the sp3 hybridization was estimated to be low. The deposition rate was measured to be approximately 200 angstroms/min at 500 °C and 400 mJ/cm2 laser fluence. AFM measurements showed smooth films with low surface roughness, approximately 1 nm on 1 μm scale length.

UR - http://www.scopus.com/inward/record.url?scp=0031075047&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031075047&partnerID=8YFLogxK

M3 - Conference contribution

VL - 109-110

BT - Applied Surface Science

A2 - Afonso, C.N.

A2 - Matthias, E.

A2 - Szorenyi, T.

ER -