Amorphous carbon film deposition by laser induced C 60 fragmentation

P. Heszler, J. O. Carlsson, J. Lu

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Abstract

It is demonstrated that a pure carbon (fullerene) precursor, C 60 , is appropriate for laser-induced carbon film deposition. Amorphous carbon films were obtained on Si and SiO 2 substrates upon ArF excimer laser induced fragmentation of gas phase C 60 . The depositions were performed in Ar and H 2 ambient in a hot-wall reactor at 550°C. Strong C 2 emission bands were observed by optical emission spectroscopy during the deposition process indicating that C 2 dimers are used for film formation, however, thermal decomposition of C 58 , C 56 , etc. high-mass fragments may also contribute to the layer development. Raman and TEM studies showed amorphous (highly disordered, turbostratic) character of the films. Optical absorption spectroscopy indicated semiconductor feature of the layers with optical band gap of 0.7 and 0.9 eV for the films deposited in Ar and H 2 ambient, respectively. For the films deposited in H 2 atmosphere, changes in the Raman spectrum and an upshift of the optical band gap of the layer indicate amorphous hydrogenated film with diamond-like character, however, degree of the sp 3 hybridisation was estimated to be low. The deposition rate was measured to be ∼ 200 Å/min at 500°C and 400 mJ/cm 2 laser fluence. AFM measurements showed smooth films with low surface roughness, ∼ 1 nm on 1 μm scale length.

Original languageEnglish
Pages (from-to)457-461
Number of pages5
JournalApplied Surface Science
Volume109-110
DOIs
Publication statusPublished - Feb 1997

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ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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