Amorphous alloy formation and thickness dependent growth of Gd-silicides in solid phase thin film reaction

G. L. Molnár, G. Petõ, E. Zsoldos, N. Q. Khánh, Z. E. Horváth

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

The formation of amorphous and equilibrium phases was investigated during the solid-phase reaction of Gd thin film with (111) and (100) oriented Si substrate as a function of thickness and annealing by X-ray diffraction, Rutherford backscattering and transmission electron microscopy. For Gd films thinner than 30 nm, the phase formation was affected by the substrate orientation. At low temperature (320°C), amorphous phase developed on Si(100). At higher temperatures epitaxial hexagonal GdSi1.7 was found on Si(111), while on Si(100), epitaxial orthorhombic GdSi2 was formed. For thicker gadolinium films on Si(111), a conventional diffusion-reaction process appeared. The hexagonal GdSi1.7 phase formed first and then transformed to the second phase (orthorhombic GdSi2). The ratio of these phases could be described by a model. On Si(100) substrate at each thickness and annealing, only orthorhombic GdSi2 phase was formed. The phase formation depended on the time and temperature of the annealing and even on the initial Gd film thickness and substrate orientation.

Original languageEnglish
Pages (from-to)417-420
Number of pages4
JournalThin Solid Films
Volume317
Issue number1-2
DOIs
Publication statusPublished - Apr 1 1998

Keywords

  • Amorphous alloy
  • Gd films
  • X-ray diffraction

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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