Amorphisation effect in binary tellurides under low energy Ar+ ion bombardment

A. Csík, Dmytro M. Zayachuk, Vasyl E. Slynko, Ute Schmidt, Csaba Buga, Kálman Vad

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Amorphisation effect on the surface of SnTe and GeTe samples under low Ar+ ion energy sputtering (160 eV) has been firstly observed. Scanning electron microscopy and Raman spectroscopy methods were used for the investigation. Microscope images show that ion bombardment changes significantly the morphology of SnTe and GeTe sample surfaces. Comparative Raman spectroscopy studies of the as-prepared and sputtered surfaces revealed that sputtering changes not only the surface morphology, but also the crystal structure of samples. Due to sputtering, the initial crystalline GeTe sample surface completely changed to amorphous, while the SnTe sample surface changed to a mixed amorphous-crystalline structure. This means that on the surface of IVB group binary tellurides an amorphisation can be evoked by low energy Ar+ ion bombardment, up to a few hundred electron volts energy.

Original languageEnglish
Pages (from-to)5-8
Number of pages4
JournalMaterials Letters
Volume236
DOIs
Publication statusPublished - Feb 1 2019

Keywords

  • Amorphisation
  • Low energy ion bombardment
  • Raman spectroscopy
  • Tellurides

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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