Aluminium induced crystallization of amorphous germanium

I. Kovács, O. Geszti, P. Harmat, G. Radnóczi

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Crystallization morphologies and kinetic processes have been studied in amorphous germanium (a-Ge) films in contact with aluminium (Al) layers of various thickness. The well-known spherulitic crystallization has been observed in a-Ge/Al/a-Ge trilayers with Al layer thickness above 10 nm. The kinetics of this growth was followed by electrical conductivity measurement of the a-Ge/Al bilayer. In the case of the thinnest Al layer (below 4 nm) fibre-like Ge crystal growth was found. The measurement results suggest that the crystallization of the amorphous Ge layers was controlled by diffusion processes.

Original languageEnglish
Pages (from-to)153-165
Number of pages13
JournalPhysica Status Solidi (A) Applied Research
Volume161
Issue number1
Publication statusPublished - May 1997

Fingerprint

Germanium
Crystallization
Aluminum
germanium
crystallization
aluminum
Kinetics
kinetics
Crystal growth
crystal growth
electrical resistivity
fibers
Fibers

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Aluminium induced crystallization of amorphous germanium. / Kovács, I.; Geszti, O.; Harmat, P.; Radnóczi, G.

In: Physica Status Solidi (A) Applied Research, Vol. 161, No. 1, 05.1997, p. 153-165.

Research output: Contribution to journalArticle

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