Structure, preparation, current-voltage and capacitance-voltage characteristics (measured in the temperature range of 80-320 K) of Al/a-SiGe: H/c-Si diodes are presented and discussed. The forward current-voltage characteristics of the diodes are exponential at low biases and quadratic at high biases. The latter feature is connected with the H-content of the amorphous layer, and is probably due to the doubleinjection space-charge limited current mechanism. The anomalies of the capacitance-voltage characteristics are due to the contributions of deep levels present in the amorphous SiGe layer.
|Number of pages||4|
|Journal||Physica Status Solidi C: Conferences|
|Publication status||Published - Dec 1 2003|
|Event||6th International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, EXMATEC 2002 - Budapest, Hungary|
Duration: May 26 2002 → May 29 2002
ASJC Scopus subject areas
- Condensed Matter Physics