Al/a-SiGe:H/c-Si m-i-p diodes - A new type of heterodevices

Zs J. Horváth, M. Serényi, M. Ádám, I. Szabó, E. Badalján, V. Rakovics

Research output: Contribution to journalConference article

2 Citations (Scopus)


Structure, preparation, current-voltage and capacitance-voltage characteristics (measured in the temperature range of 80-320 K) of Al/a-SiGe: H/c-Si diodes are presented and discussed. The forward current-voltage characteristics of the diodes are exponential at low biases and quadratic at high biases. The latter feature is connected with the H-content of the amorphous layer, and is probably due to the doubleinjection space-charge limited current mechanism. The anomalies of the capacitance-voltage characteristics are due to the contributions of deep levels present in the amorphous SiGe layer.

Original languageEnglish
Pages (from-to)1066-1069
Number of pages4
JournalPhysica Status Solidi C: Conferences
Issue number3
Publication statusPublished - Dec 1 2003
Event6th International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, EXMATEC 2002 - Budapest, Hungary
Duration: May 26 2002May 29 2002


ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this