Al-doped and Sb-doped polycrystalline silicon obtained by means of metal-induced crystallization

S. F. Gong, H. T.G. Hentzell, A. E. Robertsson, L. Hultman, S. E. Hörnström, G. Radnoczi

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Abstract

Thin-film multilayer structures of a-Si/Al/a-Si and a-Si/Sb/a-Si were deposited by electron-beam evaporation. The microstructure and the electrical properties of as-deposited and annealed (T<1370 K) thin films were determined. A p-n junction was formed between polycrystalline silicon (poly-Si) doped with Sb and a p-type Si substrate. Al and Sb were found to induce crystallization of a-Si at 600 and 700 K, respectively. After annealing to 1370 K for 60 min, the resistivities 7.0×10-3 Ω cm for the Al-Si sample and 1.4×10-2 Ω cm for the Sb-Si sample were obtained. Passivation of poly-Si grain boundaries by Sb is proposed.

Original languageEnglish
Pages (from-to)3726-3732
Number of pages7
JournalJournal of Applied Physics
Volume62
Issue number9
DOIs
Publication statusPublished - Dec 1 1987

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Gong, S. F., Hentzell, H. T. G., Robertsson, A. E., Hultman, L., Hörnström, S. E., & Radnoczi, G. (1987). Al-doped and Sb-doped polycrystalline silicon obtained by means of metal-induced crystallization. Journal of Applied Physics, 62(9), 3726-3732. https://doi.org/10.1063/1.339256