Al-doped and Sb-doped polycrystalline silicon obtained by means of metal-induced crystallization

S. F. Gong, H. T G Hentzell, A. E. Robertsson, L. Hultman, S. E. Hörnström, G. Radnóczi

Research output: Contribution to journalArticle

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Abstract

Thin-film multilayer structures of a-Si/Al/a-Si and a-Si/Sb/a-Si were deposited by electron-beam evaporation. The microstructure and the electrical properties of as-deposited and annealed (T-3 Ω cm for the Al-Si sample and 1.4×10-2 Ω cm for the Sb-Si sample were obtained. Passivation of poly-Si grain boundaries by Sb is proposed.

Original languageEnglish
Pages (from-to)3726-3732
Number of pages7
JournalJournal of Applied Physics
Volume62
Issue number9
DOIs
Publication statusPublished - 1987

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crystallization
silicon
metals
laminates
passivity
grain boundaries
electrical properties
evaporation
electron beams
microstructure
thin films

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Gong, S. F., Hentzell, H. T. G., Robertsson, A. E., Hultman, L., Hörnström, S. E., & Radnóczi, G. (1987). Al-doped and Sb-doped polycrystalline silicon obtained by means of metal-induced crystallization. Journal of Applied Physics, 62(9), 3726-3732. https://doi.org/10.1063/1.339256

Al-doped and Sb-doped polycrystalline silicon obtained by means of metal-induced crystallization. / Gong, S. F.; Hentzell, H. T G; Robertsson, A. E.; Hultman, L.; Hörnström, S. E.; Radnóczi, G.

In: Journal of Applied Physics, Vol. 62, No. 9, 1987, p. 3726-3732.

Research output: Contribution to journalArticle

Gong, S. F. ; Hentzell, H. T G ; Robertsson, A. E. ; Hultman, L. ; Hörnström, S. E. ; Radnóczi, G. / Al-doped and Sb-doped polycrystalline silicon obtained by means of metal-induced crystallization. In: Journal of Applied Physics. 1987 ; Vol. 62, No. 9. pp. 3726-3732.
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