Thin-film multilayer structures of a-Si/Al/a-Si and a-Si/Sb/a-Si were deposited by electron-beam evaporation. The microstructure and the electrical properties of as-deposited and annealed (T<1370 K) thin films were determined. A p-n junction was formed between polycrystalline silicon (poly-Si) doped with Sb and a p-type Si substrate. Al and Sb were found to induce crystallization of a-Si at 600 and 700 K, respectively. After annealing to 1370 K for 60 min, the resistivities 7.0×10-3 Ω cm for the Al-Si sample and 1.4×10-2 Ω cm for the Sb-Si sample were obtained. Passivation of poly-Si grain boundaries by Sb is proposed.
ASJC Scopus subject areas
- Physics and Astronomy(all)