AFM and TEM study of hydrogenated sputtered Si/Ge multilayers

C. Frigeri, L. Nasi, M. Serényi, A. Csík, Z. Erdélyi, D. Beke

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Multilayers of hydrogenated ultrathin (3 nm) amorphous a-Si and a-Ge layers prepared by sputtering have been studied by atomic force microscopy (AFM) and transmission electron microscopy (TEM) to check the influence of annealing on their structural stability. The annealed multilayers exhibit surface and bulk degradation with formation of bumps and craters whose density and size increase with increasing hydrogen content and/or annealing temperature and time. Bumps are due to the formation of H2 bubbles in the multilayer. The craters are bumps blown up very likely because of too high a gas pressure inside. The release of H from its bonds to Si and Ge occurs within cavities very likely present in the samples. The necessary energy is supplied by the heat treatment and by the recombination of thermally generated carriers. Results by energy filtered TEM on the interdiffusion of Si and Ge upon annealing are also presented.

Original languageEnglish
Pages (from-to)475-481
Number of pages7
JournalSuperlattices and Microstructures
Volume45
Issue number4-5
DOIs
Publication statusPublished - Apr 2009

Fingerprint

Atomic force microscopy
Multilayers
atomic force microscopy
Annealing
Transmission electron microscopy
craters
transmission electron microscopy
annealing
structural stability
gas pressure
Sputtering
Hydrogen
heat treatment
bubbles
Gases
sputtering
Heat treatment
degradation
Degradation
cavities

Keywords

  • AFM
  • Amorphous Si/Ge
  • Annealing
  • Hydrogen
  • TEM

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Materials Science(all)

Cite this

AFM and TEM study of hydrogenated sputtered Si/Ge multilayers. / Frigeri, C.; Nasi, L.; Serényi, M.; Csík, A.; Erdélyi, Z.; Beke, D.

In: Superlattices and Microstructures, Vol. 45, No. 4-5, 04.2009, p. 475-481.

Research output: Contribution to journalArticle

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AU - Beke, D.

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AB - Multilayers of hydrogenated ultrathin (3 nm) amorphous a-Si and a-Ge layers prepared by sputtering have been studied by atomic force microscopy (AFM) and transmission electron microscopy (TEM) to check the influence of annealing on their structural stability. The annealed multilayers exhibit surface and bulk degradation with formation of bumps and craters whose density and size increase with increasing hydrogen content and/or annealing temperature and time. Bumps are due to the formation of H2 bubbles in the multilayer. The craters are bumps blown up very likely because of too high a gas pressure inside. The release of H from its bonds to Si and Ge occurs within cavities very likely present in the samples. The necessary energy is supplied by the heat treatment and by the recombination of thermally generated carriers. Results by energy filtered TEM on the interdiffusion of Si and Ge upon annealing are also presented.

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