AES, SIMS, XPS analysis and electrical conductance of Ta-doped SrTiO3 thin films

E. B. Varhegyi, S. Jonda, I. V. Perczel, H. Meixner

Research output: Contribution to journalConference article

1 Citation (Scopus)


The doping process (homogenization and chemical state of dopant) was studied in this work by SIMS and AES depth profiling. The conditions of Ta diffusion into the SrTiO3 layer were selected (1100°C, 40 h). The conductivity measurement of the SrTiO3 doped with different Ta concentration proved that the Ta is a donor type dopant. The chemical state of the Ta in SrTiO3 was analyzed by XPS and proved that the Ti4+ is replaced by Ta5+ in SrTiO3.

Original languageEnglish
Pages (from-to)164-170
Number of pages7
JournalSensors and Actuators, B: Chemical
Issue number1 -3 pt 3
Publication statusPublished - Jan 1 1998
EventProceedings of the 1997 Eurosensors XI Conference. Part 3 (of 4) - Warsaw, Poland
Duration: Sep 21 1997Sep 24 1997

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering
  • Materials Chemistry

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