AES, SIMS, XPS analysis and electrical conductance of Ta-doped SrTiO3 thin films

E. B. Varhegyi, S. Jonda, I. V. Perczel, H. Meixner

Research output: Contribution to journalArticle

Abstract

The doping process (homogenisation and chemical state of dopant) was studied in this work by SIMS and AES depth profiling. The conditions of Ta diffusion into the SrTiO3 layer were selected (1100°C, 40 h). The conductivity measurement of the SrTiO3 doped with different Ta concentration proved that the Ta is a donor type dopant. The chemical state of the Ta in SrTiO3 was analysed by XPS and proved that the Ti4+ is replaced by Ta5+ in SrTiO3.

Original languageEnglish
Pages (from-to)164-170
Number of pages7
JournalSensors and Actuators, B: Chemical
Volume47
Issue number1-3
Publication statusPublished - Apr 30 1998

Fingerprint

Secondary ion mass spectrometry
homogenizing
secondary ion mass spectrometry
X ray photoelectron spectroscopy
Doping (additives)
Thin films
conductivity
thin films
Depth profiling
strontium titanium oxide

Keywords

  • AES
  • Gas sensors
  • SIMS
  • SrTiO
  • Ta doping
  • XPS

ASJC Scopus subject areas

  • Analytical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

Cite this

AES, SIMS, XPS analysis and electrical conductance of Ta-doped SrTiO3 thin films. / Varhegyi, E. B.; Jonda, S.; Perczel, I. V.; Meixner, H.

In: Sensors and Actuators, B: Chemical, Vol. 47, No. 1-3, 30.04.1998, p. 164-170.

Research output: Contribution to journalArticle

Varhegyi, E. B. ; Jonda, S. ; Perczel, I. V. ; Meixner, H. / AES, SIMS, XPS analysis and electrical conductance of Ta-doped SrTiO3 thin films. In: Sensors and Actuators, B: Chemical. 1998 ; Vol. 47, No. 1-3. pp. 164-170.
@article{0062c1c899854285891f3219930ced8c,
title = "AES, SIMS, XPS analysis and electrical conductance of Ta-doped SrTiO3 thin films",
abstract = "The doping process (homogenisation and chemical state of dopant) was studied in this work by SIMS and AES depth profiling. The conditions of Ta diffusion into the SrTiO3 layer were selected (1100°C, 40 h). The conductivity measurement of the SrTiO3 doped with different Ta concentration proved that the Ta is a donor type dopant. The chemical state of the Ta in SrTiO3 was analysed by XPS and proved that the Ti4+ is replaced by Ta5+ in SrTiO3.",
keywords = "AES, Gas sensors, SIMS, SrTiO, Ta doping, XPS",
author = "Varhegyi, {E. B.} and S. Jonda and Perczel, {I. V.} and H. Meixner",
year = "1998",
month = "4",
day = "30",
language = "English",
volume = "47",
pages = "164--170",
journal = "Sensors and Actuators, B: Chemical",
issn = "0925-4005",
publisher = "Elsevier",
number = "1-3",

}

TY - JOUR

T1 - AES, SIMS, XPS analysis and electrical conductance of Ta-doped SrTiO3 thin films

AU - Varhegyi, E. B.

AU - Jonda, S.

AU - Perczel, I. V.

AU - Meixner, H.

PY - 1998/4/30

Y1 - 1998/4/30

N2 - The doping process (homogenisation and chemical state of dopant) was studied in this work by SIMS and AES depth profiling. The conditions of Ta diffusion into the SrTiO3 layer were selected (1100°C, 40 h). The conductivity measurement of the SrTiO3 doped with different Ta concentration proved that the Ta is a donor type dopant. The chemical state of the Ta in SrTiO3 was analysed by XPS and proved that the Ti4+ is replaced by Ta5+ in SrTiO3.

AB - The doping process (homogenisation and chemical state of dopant) was studied in this work by SIMS and AES depth profiling. The conditions of Ta diffusion into the SrTiO3 layer were selected (1100°C, 40 h). The conductivity measurement of the SrTiO3 doped with different Ta concentration proved that the Ta is a donor type dopant. The chemical state of the Ta in SrTiO3 was analysed by XPS and proved that the Ti4+ is replaced by Ta5+ in SrTiO3.

KW - AES

KW - Gas sensors

KW - SIMS

KW - SrTiO

KW - Ta doping

KW - XPS

UR - http://www.scopus.com/inward/record.url?scp=0347020451&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0347020451&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0347020451

VL - 47

SP - 164

EP - 170

JO - Sensors and Actuators, B: Chemical

JF - Sensors and Actuators, B: Chemical

SN - 0925-4005

IS - 1-3

ER -