Advanced optical model for the ellipsometric study of ion implantation-caused damage depth profiles in single-crystalline silicon

P. Petrik, O. Polgár, M. Fried, T. Lohner, N. Q. Khánh, J. Gyulai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Damage depth profiles have been investigated by spectroscopic ellipsometry (SE) using an improved optical model for the evaluation. Damage created by ion implantation of Ar+ ions into single crystalline silicon was characterized using SE and Rutherford backscattering spectrometry (RBS). To create buried disorder, Ar+ ions with an energy of 100 keV were implanted into the samples. Ion doses of 4.65×1014cm -2 and 6.75×1014cm-2 were used. In our optical model, the damage profile is described by sublayers with thicknesses inversely proportional to the slope of the profile, in contrast to the earlier model having equal thicknesses. The thicknesses of the sublayers are automatically calculated from the four parameters of the coupled half-Gaussian profile, while the number of the layers are held constant. The improved fit quality and the results of measurements made by RBS and transmission electron microscopy basically supported the optical model of SE.

Original languageEnglish
Title of host publication2000 International Conference on Ion Implantation Technology, IIT 2000 - Proceedings
Pages151-154
Number of pages4
DOIs
Publication statusPublished - Dec 1 2000
Event2000 13th International Conference on Ion Implantation Technology, IIT 2000 - Alpbach, Austria
Duration: Sep 17 2000Sep 22 2000

Publication series

NameProceedings of the International Conference on Ion Implantation Technology

Other

Other2000 13th International Conference on Ion Implantation Technology, IIT 2000
CountryAustria
CityAlpbach
Period9/17/009/22/00

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Petrik, P., Polgár, O., Fried, M., Lohner, T., Khánh, N. Q., & Gyulai, J. (2000). Advanced optical model for the ellipsometric study of ion implantation-caused damage depth profiles in single-crystalline silicon. In 2000 International Conference on Ion Implantation Technology, IIT 2000 - Proceedings (pp. 151-154). [924112] (Proceedings of the International Conference on Ion Implantation Technology). https://doi.org/10.1109/.2000.924112