Adjustable Crosstalk and Blooming Suppression in Imaging Devices

I. Barsony, H. Anzai, J. Nishizawa

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Optical and electrical crosstalk performance of pixels in an integrated p-i-n photocapacitor matrix using RIE grooving of epitaxial Si wafers for isolations has been analyzed. Filled deep trench isolation in the optical devices not only resulted in superior crosstalk and blooming suppression as compared to reported conventional techniques but also provides a practical way for independent control of these effects in integrated one-or two-dimensional imaging arrays.

Original languageEnglish
Pages (from-to)229-231
Number of pages3
JournalIEEE Electron Device Letters
Volume6
Issue number5
DOIs
Publication statusPublished - 1985

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Crosstalk
Imaging techniques
Reactive ion etching
Optical devices
Pixels

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Engineering(all)

Cite this

Adjustable Crosstalk and Blooming Suppression in Imaging Devices. / Barsony, I.; Anzai, H.; Nishizawa, J.

In: IEEE Electron Device Letters, Vol. 6, No. 5, 1985, p. 229-231.

Research output: Contribution to journalArticle

Barsony, I. ; Anzai, H. ; Nishizawa, J. / Adjustable Crosstalk and Blooming Suppression in Imaging Devices. In: IEEE Electron Device Letters. 1985 ; Vol. 6, No. 5. pp. 229-231.
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