Active thermal-electronic devices based on heat-sensitive metal-insulator-transition resistor elements

J. Mizsei, Jyrki Lappalainen, Laszló Pohl

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

New active thermal-electronic device family is proposed. These devices operate by means of thermal (or hot electron) coupling between adjacent domains containing heating (input) and thermally sensitive (output) elements. The theoretical background, basic equations and comparison with the conventional electron devices are the main subject of this work. According to the theoretical assumptions the realization of the thermal-electronic device needs a very sensitive output element i.e. temperature sensor. Among others, the metal-insulator transition (MIT) based resistor fulfills this requirement. The MIT resistor itself has got thyristor-like I–V characteristics due to solely the high electric field, or Joule heating induced extremely strong step-like resistance drop at a given temperature. Using thermally coupled MIT and/or other resistors it is possible to build a special device, namely phonsistor (=phonon transistor). This device consists of only bulk type intrinsic domains, containing significantly fewer regions, junctions, depleted layers, surfaces and interfaces compared to conventional electron devices. Thus, these devices can be integrated together with each other and with conventional CMOS, forming, for example, thermal-electronic logic circuit (TELC) for the More-Than-Moore concept devices.

Original languageEnglish
Pages (from-to)14-20
Number of pages7
JournalSensors and Actuators, A: Physical
Volume267
DOIs
Publication statusPublished - Nov 1 2017

Fingerprint

Transition Elements
Metal insulator transition
resistors
Resistors
insulators
Electron devices
heat
electronics
metals
Joule heating
Hot electrons
Logic circuits
Temperature sensors
Thyristors
Transistors
Electric fields
Heating
Hot Temperature
thyristors
logic circuits

Keywords

  • Beyond CMOS
  • Metal-insulator transition (MIT)
  • Nano-electronics
  • Semiconductor-metal transition (smt)
  • Thermal-electronic device
  • VO

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering

Cite this

Active thermal-electronic devices based on heat-sensitive metal-insulator-transition resistor elements. / Mizsei, J.; Lappalainen, Jyrki; Pohl, Laszló.

In: Sensors and Actuators, A: Physical, Vol. 267, 01.11.2017, p. 14-20.

Research output: Contribution to journalArticle

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