Activation of shallow boron acceptor in CB coimplanted silicon carbide: A theoretical study

A. Gali, T. Hornos, P. Deák, N. T. Son, E. Janźn, W. J. Choyke

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

Ab initio supercell calculations have been carried out to investigate the complexes of boron acceptors with carbon self-interstitials in cubic silicon carbide. Based on the calculated binding energies, the complex formation of carbon interstitials with shallow boron acceptor and boron interstitial is energetically favored in silicon carbide. These bistable boron defects possess deep, negative- U occupation levels in the band gap. The theoretical results can explain the observed activation rates in carbon-boron coimplantation experiments.

Original languageEnglish
Article number102108
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number10
DOIs
Publication statusPublished - Mar 7 2005

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silicon carbides
boron
activation
interstitials
carbon
occupation
binding energy
defects

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Activation of shallow boron acceptor in CB coimplanted silicon carbide : A theoretical study. / Gali, A.; Hornos, T.; Deák, P.; Son, N. T.; Janźn, E.; Choyke, W. J.

In: Applied Physics Letters, Vol. 86, No. 10, 102108, 07.03.2005, p. 1-3.

Research output: Contribution to journalArticle

Gali, A. ; Hornos, T. ; Deák, P. ; Son, N. T. ; Janźn, E. ; Choyke, W. J. / Activation of shallow boron acceptor in CB coimplanted silicon carbide : A theoretical study. In: Applied Physics Letters. 2005 ; Vol. 86, No. 10. pp. 1-3.
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