Accurate thermal characterization of power semiconductor packages by thermal simulation and measurements

Andras Vass-Varnai, Robin Bornoff, Sandor Ress, Zoltan Sarkany, Sandor Hodossy, M. Rencz

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

In this paper the possibility of generating a compact thermal model based on thermal transient measurements is discussed and evaluated. A case study of a power diode in a cylindrical-shaped copper package is shown. The detailed model of the package is built and simulated in a CFD based thermal simulator software. The measurement results are compared to the results of the simulations and after some model refinement we found good agreement. The compact model of the package is also identified based on the structure functions generated from the real measurement. The case-node is determined using the standard dual-interface method. The resulting compact model has proven to be a perfect representation of the real package as the structure functions generated based on measurements and corresponding simulation results match perfectly.

Original languageEnglish
Title of host publicationDTIP 2011 - Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS
Pages324-329
Number of pages6
Publication statusPublished - 2011
Event2011 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS, DTIP 2011 - Aix-en-Provence, France
Duration: May 11 2011May 13 2011

Other

Other2011 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS, DTIP 2011
CountryFrance
CityAix-en-Provence
Period5/11/115/13/11

Fingerprint

Semiconductor materials
Computational fluid dynamics
Simulators
Hot Temperature
Copper

ASJC Scopus subject areas

  • Hardware and Architecture

Cite this

Vass-Varnai, A., Bornoff, R., Ress, S., Sarkany, Z., Hodossy, S., & Rencz, M. (2011). Accurate thermal characterization of power semiconductor packages by thermal simulation and measurements. In DTIP 2011 - Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS (pp. 324-329). [6107991]

Accurate thermal characterization of power semiconductor packages by thermal simulation and measurements. / Vass-Varnai, Andras; Bornoff, Robin; Ress, Sandor; Sarkany, Zoltan; Hodossy, Sandor; Rencz, M.

DTIP 2011 - Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS. 2011. p. 324-329 6107991.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Vass-Varnai, A, Bornoff, R, Ress, S, Sarkany, Z, Hodossy, S & Rencz, M 2011, Accurate thermal characterization of power semiconductor packages by thermal simulation and measurements. in DTIP 2011 - Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS., 6107991, pp. 324-329, 2011 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS, DTIP 2011, Aix-en-Provence, France, 5/11/11.
Vass-Varnai A, Bornoff R, Ress S, Sarkany Z, Hodossy S, Rencz M. Accurate thermal characterization of power semiconductor packages by thermal simulation and measurements. In DTIP 2011 - Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS. 2011. p. 324-329. 6107991
Vass-Varnai, Andras ; Bornoff, Robin ; Ress, Sandor ; Sarkany, Zoltan ; Hodossy, Sandor ; Rencz, M. / Accurate thermal characterization of power semiconductor packages by thermal simulation and measurements. DTIP 2011 - Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS. 2011. pp. 324-329
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