Accurate determination of lattice mismatch in the epitaxial AlAs/GaAs system by high-resolution X-ray diffraction

C. Bocchi, C. Ferrari, P. Franzosi, A. Bosacchi, S. Franchi

Research output: Contribution to journalArticle

24 Citations (Scopus)

Abstract

Knowledge of the lattice mismatch in the AlAs/GaAs system is needed for measuring the Al content in Ga1 - xAlxAs/GaAs heteroepitaxial structures. This mismatch has been accurately measured by high resolution X-ray diffractometry in AlAs/GaAs heterostructures grown by molecular beam epitaxy. For a completely strained AlAs epilayer a relative mismatch of 2.775X10-3 has been obtained with an estimated accuracy of ±5x10-6. The Poisson ratio of AlAs has been also determined by comparing a suitable set of diffraction profiles recorded in completely strained and partially relaxed epilayers respectively. A value of v = 0.322±0.005, in agreement with previously published data has been found.

Original languageEnglish
Pages (from-to)427-434
Number of pages8
JournalJournal of Crystal Growth
Volume132
Issue number3-4
DOIs
Publication statusPublished - Sep 2 1993

Fingerprint

Lattice mismatch
Epilayers
Poisson ratio
molecular beam epitaxy
X ray diffraction
high resolution
profiles
diffraction
Molecular beam epitaxy
X ray diffraction analysis
Heterojunctions
x rays
Diffraction
gallium arsenide

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Accurate determination of lattice mismatch in the epitaxial AlAs/GaAs system by high-resolution X-ray diffraction. / Bocchi, C.; Ferrari, C.; Franzosi, P.; Bosacchi, A.; Franchi, S.

In: Journal of Crystal Growth, Vol. 132, No. 3-4, 02.09.1993, p. 427-434.

Research output: Contribution to journalArticle

Bocchi, C. ; Ferrari, C. ; Franzosi, P. ; Bosacchi, A. ; Franchi, S. / Accurate determination of lattice mismatch in the epitaxial AlAs/GaAs system by high-resolution X-ray diffraction. In: Journal of Crystal Growth. 1993 ; Vol. 132, No. 3-4. pp. 427-434.
@article{2c48df57bd07470797d4c5fd191508cf,
title = "Accurate determination of lattice mismatch in the epitaxial AlAs/GaAs system by high-resolution X-ray diffraction",
abstract = "Knowledge of the lattice mismatch in the AlAs/GaAs system is needed for measuring the Al content in Ga1 - xAlxAs/GaAs heteroepitaxial structures. This mismatch has been accurately measured by high resolution X-ray diffractometry in AlAs/GaAs heterostructures grown by molecular beam epitaxy. For a completely strained AlAs epilayer a relative mismatch of 2.775X10-3 has been obtained with an estimated accuracy of ±5x10-6. The Poisson ratio of AlAs has been also determined by comparing a suitable set of diffraction profiles recorded in completely strained and partially relaxed epilayers respectively. A value of v = 0.322±0.005, in agreement with previously published data has been found.",
author = "C. Bocchi and C. Ferrari and P. Franzosi and A. Bosacchi and S. Franchi",
year = "1993",
month = "9",
day = "2",
doi = "10.1016/0022-0248(93)90068-8",
language = "English",
volume = "132",
pages = "427--434",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "3-4",

}

TY - JOUR

T1 - Accurate determination of lattice mismatch in the epitaxial AlAs/GaAs system by high-resolution X-ray diffraction

AU - Bocchi, C.

AU - Ferrari, C.

AU - Franzosi, P.

AU - Bosacchi, A.

AU - Franchi, S.

PY - 1993/9/2

Y1 - 1993/9/2

N2 - Knowledge of the lattice mismatch in the AlAs/GaAs system is needed for measuring the Al content in Ga1 - xAlxAs/GaAs heteroepitaxial structures. This mismatch has been accurately measured by high resolution X-ray diffractometry in AlAs/GaAs heterostructures grown by molecular beam epitaxy. For a completely strained AlAs epilayer a relative mismatch of 2.775X10-3 has been obtained with an estimated accuracy of ±5x10-6. The Poisson ratio of AlAs has been also determined by comparing a suitable set of diffraction profiles recorded in completely strained and partially relaxed epilayers respectively. A value of v = 0.322±0.005, in agreement with previously published data has been found.

AB - Knowledge of the lattice mismatch in the AlAs/GaAs system is needed for measuring the Al content in Ga1 - xAlxAs/GaAs heteroepitaxial structures. This mismatch has been accurately measured by high resolution X-ray diffractometry in AlAs/GaAs heterostructures grown by molecular beam epitaxy. For a completely strained AlAs epilayer a relative mismatch of 2.775X10-3 has been obtained with an estimated accuracy of ±5x10-6. The Poisson ratio of AlAs has been also determined by comparing a suitable set of diffraction profiles recorded in completely strained and partially relaxed epilayers respectively. A value of v = 0.322±0.005, in agreement with previously published data has been found.

UR - http://www.scopus.com/inward/record.url?scp=0027906436&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0027906436&partnerID=8YFLogxK

U2 - 10.1016/0022-0248(93)90068-8

DO - 10.1016/0022-0248(93)90068-8

M3 - Article

VL - 132

SP - 427

EP - 434

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 3-4

ER -