Accurate determination of lattice mismatch in the epitaxial AlAs/GaAs system by high-resolution X-ray diffraction

C. Bocchi, C. Ferrari, P. Franzosi, A. Bosacchi, S. Franchi

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Abstract

Knowledge of the lattice mismatch in the AlAs/GaAs system is needed for measuring the Al content in Ga1 - xAlxAs/GaAs heteroepitaxial structures. This mismatch has been accurately measured by high resolution X-ray diffractometry in AlAs/GaAs heterostructures grown by molecular beam epitaxy. For a completely strained AlAs epilayer a relative mismatch of 2.775X10-3 has been obtained with an estimated accuracy of ±5x10-6. The Poisson ratio of AlAs has been also determined by comparing a suitable set of diffraction profiles recorded in completely strained and partially relaxed epilayers respectively. A value of v = 0.322±0.005, in agreement with previously published data has been found.

Original languageEnglish
Pages (from-to)427-434
Number of pages8
JournalJournal of Crystal Growth
Volume132
Issue number3-4
DOIs
Publication statusPublished - Sep 2 1993

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ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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