Absorption and photoluminescent measurements in indirect, nitrogen doped GaAs1-χPχ

M. Gál, T. Görög, A. Keresztury

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The absorption and photoluminescent spectra of nitrogen doped GaAs1-χPχ epitaxial layers were studied in the alloy composition range 0.58 ≤ χ ≤ 0.77. The structure in the absorption and luminescent spectra are analysed.

Original languageEnglish
Pages (from-to)491-493
Number of pages3
JournalSolid State Communications
Volume21
Issue number5
DOIs
Publication statusPublished - Feb 1977

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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