Ab initio supercell calculations on aluminum-related defects in SiC

A. Gali, T. Hornos, N. T. Son, E. Janzén, W. J. Choyke

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

Ab initio supercell calculations of the binding energies predict complex formation between aluminum and carbon interstitials in SiC. In high-energy implanted SiC aluminum acceptor can form very stable complexes with two carbon interstitials. We also show that carbon vacancy can be attached to shallow aluminum acceptor. All of these defects produce deep levels in the band gap. The possible relation of these defects to the recently found aluminum-related deep-level transient spectroscopy centers is discussed.

Original languageEnglish
Article number045211
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume75
Issue number4
DOIs
Publication statusPublished - Jan 31 2007

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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