A transmission electron microscopy investigation of SiC films grown on Si(111) substrates by solid-source molecular beam epitaxy

U. Kaiser, S. B. Newcomb, W. M. Stobbs, M. Adamik, A. Fissel, W. Richter

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10 Citations (Scopus)


The effects of different growth parameters on the microstructure of the SiC films formed during simultaneous two-source molecular-beam-epitaxial (MBE) deposition have been investigated. Substrate temperatures as low as 750-900 °C have been used. The relationship between a number of different growth morphologies and deposition conditions has been established. The formation of single-crystal 3C films has been found to occur at low growth rates but within a limited Si : C adatom ratio. A combination of transmission electron microscopy (TEM) and atomic force microscopy (AFM) has been used to examine the different films, and the results of these investigations are described.

Original languageEnglish
Pages (from-to)3571-3579
Number of pages9
JournalJournal of Materials Research
Issue number12
Publication statusPublished - Dec 1998


ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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