A study of the morphology of 3C-SiC layers grown at different C/Si ratios

G. Attolini, B. E. Watts, M. Bosi, F. Rossi, F. Riesz

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

A comparative study of the morphology of 3C-SiC films prepared with different C:Si ratios is presented. The silane precursor controls the growth rate at all values of C:Si ratio but combined observations using Atomic Force Microscopy and Scanning Electron Microscopy indicate that the C:Si ratio is critical in determining the grain size and faceting at C:Si values close to 1. Makyoh topography reveals various surface defects, a slight mesoscale roughness and bending of the epiwafers.

Original languageEnglish
Title of host publicationECS Transactions - Analytical Techniques for Semiconductor Materials and Process Characterization 6, ALTECH 2009
Pages397-401
Number of pages5
Edition3
DOIs
Publication statusPublished - Dec 1 2009
EventAnalytical Techniques for Semiconductor Materials and Process Characterization 6, ALTECH 2009 - 216th ECS Meeting - Vienna, Austria
Duration: Oct 4 2009Oct 9 2009

Publication series

NameECS Transactions
Number3
Volume25
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherAnalytical Techniques for Semiconductor Materials and Process Characterization 6, ALTECH 2009 - 216th ECS Meeting
CountryAustria
CityVienna
Period10/4/0910/9/09

ASJC Scopus subject areas

  • Engineering(all)

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    Attolini, G., Watts, B. E., Bosi, M., Rossi, F., & Riesz, F. (2009). A study of the morphology of 3C-SiC layers grown at different C/Si ratios. In ECS Transactions - Analytical Techniques for Semiconductor Materials and Process Characterization 6, ALTECH 2009 (3 ed., pp. 397-401). (ECS Transactions; Vol. 25, No. 3). https://doi.org/10.1149/1.3204430