A study of the initial stages of the oxidation of silicon using 18O2 and RTP

J. J. Ganem, G. Battistig, S. Rigo, I. Trimaille

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Abstract

The growth mechanisms of the first steps of silicon oxidation at high temperature were studied. The rapid thermal oxidation under a static pressure (40 or 84 mbar) of oxygen isotopically labelled gas (18O2) has evidenced a linear rapid initial growth rate before the classical linear-parabolic Deal and Grove law prevails. The analyses of the 18O depth profile in oxide films formed by sequential oxidations, under dry 16O2 followed by 18O2, suggest an interpretation accounting for the rapid initial oxidation rate: the appearance during the first seconds of non-oxidized silicon fragments in the freshly formed silica network.

Original languageEnglish
Pages (from-to)647-653
Number of pages7
JournalApplied Surface Science
Volume65-66
Issue numberC
DOIs
Publication statusPublished - Mar 2 1993

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ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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