A Shallow Acceptor Complex in 4H-SiC: AlSiNcAl Si

P. Deák, B. Aradi, A. Gali, U. Gerstmann, W. J. Choyke

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)


The usual p-type dopants of SiC do not provide sufficiently shallow acceptor levels. It is argued that the reason for that lies in the large relaxations around substitutional B and Al. The complex AlSiN CAlSi is suggested as an alternative. First principles calculations show that the lattice relaxation around this defect is smaller, and that it gives rise to an acceptor state more delocalized and shallower than that of aluminum. The complex is predicted to be stable with respect to its constituents.

Original languageEnglish
Title of host publicationMaterials Science Forum
EditorsPeder Bergman, Erik Janzén
PublisherTrans Tech Publications Ltd
Number of pages4
ISBN (Print)9780878499205
Publication statusPublished - Jan 1 2003
EventProceedings of the 4th European Conference on Silicon Carbide and Related Materials - Linkoping, Sweden
Duration: Sep 2 2002Sep 5 2002

Publication series

NameMaterials Science Forum
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752


ConferenceProceedings of the 4th European Conference on Silicon Carbide and Related Materials


  • Aluminum
  • Boron
  • Co-Doping
  • Nitrogen
  • Shallow Acceptors
  • SiC

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Deák, P., Aradi, B., Gali, A., Gerstmann, U., & Choyke, W. J. (2003). A Shallow Acceptor Complex in 4H-SiC: AlSiNcAl Si. In P. Bergman, & E. Janzén (Eds.), Materials Science Forum (pp. 523-526). (Materials Science Forum; Vol. 433-436). Trans Tech Publications Ltd.