A photoluminescence study of the effects of hydrogen on deep levels in MBE grown GaAlAs: Si

A. Bosacchi, S. Franchi, L. Vanzetti, P. Allegri, E. Grilli, M. Guzzi, R. Zamboni, L. Pavesi

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Abstract

We present a study on low-temperature photoluminescence (PL) of Si-doped Ga1-xAlxAs (n ~ 1 × 1017 cm-3, 0.2 ≤ x ≤ 0.5) grown by MBE in the presence and in the absence of a hydrogen backpressure, and post-growth hydrogenated or not, by exposure to a hydrogen plasma. The PL spectra of GaAlAs grown without hydrogen are dominated by transitions involving relatively deep donors and/or acceptors independently on whether the material is post-growth hydrogenated. On the contrary, the spectra of GaAlAs grown in the presence of hydrogen are characterized by recombinations related to excitons and/or to shallow donors and acceptors. Both the in-situ and the ex-situ processes result in PL efficiency enhancements, which are definitely larger (by a factor of up to 20) when the former treatment is used. All of the above results suggest that the ex-situ and the in-situ treatments may affect deep levels of different origin, such as DX centers (related to the band structure of the semiconductor) and levels associated to Al-O complexes, respectively.

Original languageEnglish
Pages (from-to)540-544
Number of pages5
JournalPhysica B: Condensed Matter
Volume170
Issue number1-4
DOIs
Publication statusPublished - 1991

Fingerprint

Molecular beam epitaxy
Hydrogen
Photoluminescence
photoluminescence
hydrogen
hydrogen plasma
excitons
Excitons
Band structure
augmentation
Semiconductor materials
Plasmas
Temperature

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

A photoluminescence study of the effects of hydrogen on deep levels in MBE grown GaAlAs : Si. / Bosacchi, A.; Franchi, S.; Vanzetti, L.; Allegri, P.; Grilli, E.; Guzzi, M.; Zamboni, R.; Pavesi, L.

In: Physica B: Condensed Matter, Vol. 170, No. 1-4, 1991, p. 540-544.

Research output: Contribution to journalArticle

Bosacchi, A, Franchi, S, Vanzetti, L, Allegri, P, Grilli, E, Guzzi, M, Zamboni, R & Pavesi, L 1991, 'A photoluminescence study of the effects of hydrogen on deep levels in MBE grown GaAlAs: Si', Physica B: Condensed Matter, vol. 170, no. 1-4, pp. 540-544. https://doi.org/10.1016/0921-4526(91)90173-C
Bosacchi, A. ; Franchi, S. ; Vanzetti, L. ; Allegri, P. ; Grilli, E. ; Guzzi, M. ; Zamboni, R. ; Pavesi, L. / A photoluminescence study of the effects of hydrogen on deep levels in MBE grown GaAlAs : Si. In: Physica B: Condensed Matter. 1991 ; Vol. 170, No. 1-4. pp. 540-544.
@article{8fcae0c4fe854fe1b90b753f5387c3a5,
title = "A photoluminescence study of the effects of hydrogen on deep levels in MBE grown GaAlAs: Si",
abstract = "We present a study on low-temperature photoluminescence (PL) of Si-doped Ga1-xAlxAs (n ~ 1 × 1017 cm-3, 0.2 ≤ x ≤ 0.5) grown by MBE in the presence and in the absence of a hydrogen backpressure, and post-growth hydrogenated or not, by exposure to a hydrogen plasma. The PL spectra of GaAlAs grown without hydrogen are dominated by transitions involving relatively deep donors and/or acceptors independently on whether the material is post-growth hydrogenated. On the contrary, the spectra of GaAlAs grown in the presence of hydrogen are characterized by recombinations related to excitons and/or to shallow donors and acceptors. Both the in-situ and the ex-situ processes result in PL efficiency enhancements, which are definitely larger (by a factor of up to 20) when the former treatment is used. All of the above results suggest that the ex-situ and the in-situ treatments may affect deep levels of different origin, such as DX centers (related to the band structure of the semiconductor) and levels associated to Al-O complexes, respectively.",
author = "A. Bosacchi and S. Franchi and L. Vanzetti and P. Allegri and E. Grilli and M. Guzzi and R. Zamboni and L. Pavesi",
year = "1991",
doi = "10.1016/0921-4526(91)90173-C",
language = "English",
volume = "170",
pages = "540--544",
journal = "Physica B: Condensed Matter",
issn = "0921-4526",
publisher = "Elsevier",
number = "1-4",

}

TY - JOUR

T1 - A photoluminescence study of the effects of hydrogen on deep levels in MBE grown GaAlAs

T2 - Si

AU - Bosacchi, A.

AU - Franchi, S.

AU - Vanzetti, L.

AU - Allegri, P.

AU - Grilli, E.

AU - Guzzi, M.

AU - Zamboni, R.

AU - Pavesi, L.

PY - 1991

Y1 - 1991

N2 - We present a study on low-temperature photoluminescence (PL) of Si-doped Ga1-xAlxAs (n ~ 1 × 1017 cm-3, 0.2 ≤ x ≤ 0.5) grown by MBE in the presence and in the absence of a hydrogen backpressure, and post-growth hydrogenated or not, by exposure to a hydrogen plasma. The PL spectra of GaAlAs grown without hydrogen are dominated by transitions involving relatively deep donors and/or acceptors independently on whether the material is post-growth hydrogenated. On the contrary, the spectra of GaAlAs grown in the presence of hydrogen are characterized by recombinations related to excitons and/or to shallow donors and acceptors. Both the in-situ and the ex-situ processes result in PL efficiency enhancements, which are definitely larger (by a factor of up to 20) when the former treatment is used. All of the above results suggest that the ex-situ and the in-situ treatments may affect deep levels of different origin, such as DX centers (related to the band structure of the semiconductor) and levels associated to Al-O complexes, respectively.

AB - We present a study on low-temperature photoluminescence (PL) of Si-doped Ga1-xAlxAs (n ~ 1 × 1017 cm-3, 0.2 ≤ x ≤ 0.5) grown by MBE in the presence and in the absence of a hydrogen backpressure, and post-growth hydrogenated or not, by exposure to a hydrogen plasma. The PL spectra of GaAlAs grown without hydrogen are dominated by transitions involving relatively deep donors and/or acceptors independently on whether the material is post-growth hydrogenated. On the contrary, the spectra of GaAlAs grown in the presence of hydrogen are characterized by recombinations related to excitons and/or to shallow donors and acceptors. Both the in-situ and the ex-situ processes result in PL efficiency enhancements, which are definitely larger (by a factor of up to 20) when the former treatment is used. All of the above results suggest that the ex-situ and the in-situ treatments may affect deep levels of different origin, such as DX centers (related to the band structure of the semiconductor) and levels associated to Al-O complexes, respectively.

UR - http://www.scopus.com/inward/record.url?scp=0026138496&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0026138496&partnerID=8YFLogxK

U2 - 10.1016/0921-4526(91)90173-C

DO - 10.1016/0921-4526(91)90173-C

M3 - Article

AN - SCOPUS:0026138496

VL - 170

SP - 540

EP - 544

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

SN - 0921-4526

IS - 1-4

ER -