A photoluminescence study of the effects of hydrogen on deep levels in MBE grown GaAlAs:Si

A. Bosacchi, S. Franchi, L. Vanzetti, P. Allegri, E. Grilli, M. Guzzi, R. Zamboni, L. Pavesi

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3 Citations (Scopus)


We present a study on low-temperature photoluminescence (PL) of Si-doped Ga1-xAlxAs (n ~ 1 × 1017 cm-3, 0.2 ≤ x ≤ 0.5) grown by MBE in the presence and in the absence of a hydrogen backpressure, and post-growth hydrogenated or not, by exposure to a hydrogen plasma. The PL spectra of GaAlAs grown without hydrogen are dominated by transitions involving relatively deep donors and/or acceptors independently on whether the material is post-growth hydrogenated. On the contrary, the spectra of GaAlAs grown in the presence of hydrogen are characterized by recombinations related to excitons and/or to shallow donors and acceptors. Both the in-situ and the ex-situ processes result in PL efficiency enhancements, which are definitely larger (by a factor of up to 20) when the former treatment is used. All of the above results suggest that the ex-situ and the in-situ treatments may affect deep levels of different origin, such as DX centers (related to the band structure of the semiconductor) and levels associated to Al-O complexes, respectively.

Original languageEnglish
Pages (from-to)540-544
Number of pages5
JournalPhysica B: Physics of Condensed Matter
Issue number1-4
Publication statusPublished - Apr 1991

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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