A novel mesfet‐compatible gaas optoelectronic switch

Ferenc Riesz, B. Szentpáli, P. Gottwald, M. Németh‐Sallay

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Photoconductive optoelectronic pulse‐forming switches have been fabricated from vapor‐phase epitaxially grown GaAs‐based layer structures. The fabrication process is compatible with the MESFET/MMIC technology. The light‐absorbing region is thinned by chemical etching, thus changing the actual carrier lifetime in this region. The switches showed off/on resistance ratios of about 500 even at about 0.1‐mW incident optical power. The pulse response of the devices is limited by the lifetime of charge carriers.

Original languageEnglish
Pages (from-to)112-114
Number of pages3
JournalMicrowave and Optical Technology Letters
Volume5
Issue number3
DOIs
Publication statusPublished - Mar 1992

Keywords

  • GaAs MESFET technology
  • Optoelectronic switching
  • partially compensated buffer layer

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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