Abstract
A fast and realistic kinetic Monte Carlo method, aimed to reproduce pattern formation mechanism in epitaxial growth is presented. By several simple examples the applicability of the method is illustrated: dynamics and statistics of island growth and coalescence, Impurity segregation and stacking fault dynamics. The method offers new perspectives for simulating hetero-epltaxial growth and the formation of several deposited layers in reasonable computational time, using normal PC type computers.
| Original language | English |
|---|---|
| Pages (from-to) | 2445-2450 |
| Number of pages | 6 |
| Journal | Journal of Optoelectronics and Advanced Materials |
| Volume | 10 |
| Issue number | 9 |
| Publication status | Published - Sep 2008 |
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Keywords
- Coalescence
- Epitaxial growth
- Kinetic Monte Carlo
- Monolayer formation
- Pattern formation
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering
Cite this
A novel kinetic Monte Carlo method for epitaxial growth. / Deák, R.; Néda, Z.; Barna, P.
In: Journal of Optoelectronics and Advanced Materials, Vol. 10, No. 9, 09.2008, p. 2445-2450.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - A novel kinetic Monte Carlo method for epitaxial growth
AU - Deák, R.
AU - Néda, Z.
AU - Barna, P.
PY - 2008/9
Y1 - 2008/9
N2 - A fast and realistic kinetic Monte Carlo method, aimed to reproduce pattern formation mechanism in epitaxial growth is presented. By several simple examples the applicability of the method is illustrated: dynamics and statistics of island growth and coalescence, Impurity segregation and stacking fault dynamics. The method offers new perspectives for simulating hetero-epltaxial growth and the formation of several deposited layers in reasonable computational time, using normal PC type computers.
AB - A fast and realistic kinetic Monte Carlo method, aimed to reproduce pattern formation mechanism in epitaxial growth is presented. By several simple examples the applicability of the method is illustrated: dynamics and statistics of island growth and coalescence, Impurity segregation and stacking fault dynamics. The method offers new perspectives for simulating hetero-epltaxial growth and the formation of several deposited layers in reasonable computational time, using normal PC type computers.
KW - Coalescence
KW - Epitaxial growth
KW - Kinetic Monte Carlo
KW - Monolayer formation
KW - Pattern formation
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UR - http://www.scopus.com/inward/citedby.url?scp=53049109071&partnerID=8YFLogxK
M3 - Article
VL - 10
SP - 2445
EP - 2450
JO - Journal of Optoelectronics and Advanced Materials
JF - Journal of Optoelectronics and Advanced Materials
SN - 1454-4164
IS - 9
ER -