A novel kinetic Monte Carlo method for epitaxial growth

R. Deák, Z. Néda, P. Barna

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

A fast and realistic kinetic Monte Carlo method, aimed to reproduce pattern formation mechanism in epitaxial growth is presented. By several simple examples the applicability of the method is illustrated: dynamics and statistics of island growth and coalescence, Impurity segregation and stacking fault dynamics. The method offers new perspectives for simulating hetero-epltaxial growth and the formation of several deposited layers in reasonable computational time, using normal PC type computers.

Original languageEnglish
Pages (from-to)2445-2450
Number of pages6
JournalJournal of Optoelectronics and Advanced Materials
Volume10
Issue number9
Publication statusPublished - Sep 2008

Fingerprint

Epitaxial growth
Monte Carlo method
Monte Carlo methods
Kinetics
Stacking faults
kinetics
Coalescence
Statistics
Impurities
crystal defects
coalescing
statistics
impurities

Keywords

  • Coalescence
  • Epitaxial growth
  • Kinetic Monte Carlo
  • Monolayer formation
  • Pattern formation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Cite this

A novel kinetic Monte Carlo method for epitaxial growth. / Deák, R.; Néda, Z.; Barna, P.

In: Journal of Optoelectronics and Advanced Materials, Vol. 10, No. 9, 09.2008, p. 2445-2450.

Research output: Contribution to journalArticle

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