Abstract
A new semiconductor, the pseudo-ternary GaPAsSb, has been prepared in epitaxial layer form. This quaternary can be lattice matched both to GaAs and to InP. A liquid phase epitaxial method is described to grow double hetero-epitaxial systems made from GaAs and GaPAsSb. The lattice matching has been studied using X-ray rocking curve and X-ray topography techniques. The composition and phase diagram data were also studied using different growth temperatures. In the system nearly perfect lattice matching was achieved. Luminescence measurements showed that the system can substitute for the GaAs/GaAlAs double heteroepitaxial systems conventionally used for laser diodes.
| Original language | English |
|---|---|
| Pages (from-to) | 928-934 |
| Number of pages | 7 |
| Journal | Journal of Crystal Growth |
| Volume | 79 |
| Issue number | 1-3 PART 2 |
| DOIs | |
| Publication status | Published - Dec 2 1986 |
Fingerprint
ASJC Scopus subject areas
- Condensed Matter Physics
Cite this
A novel double heterostructure : The GaAs/GaPAsSb system. / Lendvay, E.; Görög, T.; Andor, L.; Petrás, L.; Tóth, A.
In: Journal of Crystal Growth, Vol. 79, No. 1-3 PART 2, 02.12.1986, p. 928-934.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - A novel double heterostructure
T2 - The GaAs/GaPAsSb system
AU - Lendvay, E.
AU - Görög, T.
AU - Andor, L.
AU - Petrás, L.
AU - Tóth, A.
PY - 1986/12/2
Y1 - 1986/12/2
N2 - A new semiconductor, the pseudo-ternary GaPAsSb, has been prepared in epitaxial layer form. This quaternary can be lattice matched both to GaAs and to InP. A liquid phase epitaxial method is described to grow double hetero-epitaxial systems made from GaAs and GaPAsSb. The lattice matching has been studied using X-ray rocking curve and X-ray topography techniques. The composition and phase diagram data were also studied using different growth temperatures. In the system nearly perfect lattice matching was achieved. Luminescence measurements showed that the system can substitute for the GaAs/GaAlAs double heteroepitaxial systems conventionally used for laser diodes.
AB - A new semiconductor, the pseudo-ternary GaPAsSb, has been prepared in epitaxial layer form. This quaternary can be lattice matched both to GaAs and to InP. A liquid phase epitaxial method is described to grow double hetero-epitaxial systems made from GaAs and GaPAsSb. The lattice matching has been studied using X-ray rocking curve and X-ray topography techniques. The composition and phase diagram data were also studied using different growth temperatures. In the system nearly perfect lattice matching was achieved. Luminescence measurements showed that the system can substitute for the GaAs/GaAlAs double heteroepitaxial systems conventionally used for laser diodes.
UR - http://www.scopus.com/inward/record.url?scp=46149129952&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=46149129952&partnerID=8YFLogxK
U2 - 10.1016/0022-0248(86)90574-9
DO - 10.1016/0022-0248(86)90574-9
M3 - Article
AN - SCOPUS:46149129952
VL - 79
SP - 928
EP - 934
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 1-3 PART 2
ER -