A novel double heterostructure: The GaAs/GaPAsSb system

E. Lendvay, T. Görög, L. Andor, L. Petrás, A. Tóth

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

A new semiconductor, the pseudo-ternary GaPAsSb, has been prepared in epitaxial layer form. This quaternary can be lattice matched both to GaAs and to InP. A liquid phase epitaxial method is described to grow double hetero-epitaxial systems made from GaAs and GaPAsSb. The lattice matching has been studied using X-ray rocking curve and X-ray topography techniques. The composition and phase diagram data were also studied using different growth temperatures. In the system nearly perfect lattice matching was achieved. Luminescence measurements showed that the system can substitute for the GaAs/GaAlAs double heteroepitaxial systems conventionally used for laser diodes.

Original languageEnglish
Pages (from-to)928-934
Number of pages7
JournalJournal of Crystal Growth
Volume79
Issue number1-3 PART 2
DOIs
Publication statusPublished - Dec 2 1986

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Heterojunctions
X rays
Epitaxial layers
Growth temperature
Crystal lattices
Topography
Phase diagrams
Semiconductor lasers
Luminescence
Semiconductor materials
topography
liquid phases
Liquids
x rays
semiconductor lasers
Chemical analysis
diagrams
phase diagrams
substitutes
luminescence

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

A novel double heterostructure : The GaAs/GaPAsSb system. / Lendvay, E.; Görög, T.; Andor, L.; Petrás, L.; Tóth, A.

In: Journal of Crystal Growth, Vol. 79, No. 1-3 PART 2, 02.12.1986, p. 928-934.

Research output: Contribution to journalArticle

Lendvay, E, Görög, T, Andor, L, Petrás, L & Tóth, A 1986, 'A novel double heterostructure: The GaAs/GaPAsSb system', Journal of Crystal Growth, vol. 79, no. 1-3 PART 2, pp. 928-934. https://doi.org/10.1016/0022-0248(86)90574-9
Lendvay, E. ; Görög, T. ; Andor, L. ; Petrás, L. ; Tóth, A. / A novel double heterostructure : The GaAs/GaPAsSb system. In: Journal of Crystal Growth. 1986 ; Vol. 79, No. 1-3 PART 2. pp. 928-934.
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