A noise temperature analysis of the electrical degradation of thin nanostructured films

C. Pennetta, L. B. Kiss, Z. Gingl, L. Reggiani

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Thermal noise measurements at proper biasing conditions are shown to represent a powerful tool for the characterization of the homogeneity of thin nanostructured films and their adhesion to the substrate. By modeling a thinfilm as a two-dimensional random resistor network, we introduce a new type of excess-noise arising from local sources of Nyquist noise due to the presence of defective regions. The dishomogeneous Joule heating of the film is responsible for a thermal and electrical instability which is efficiently described by using a biased percolation model. The results of our simulations show that the Nyquist excess-noise temperature should provide a sensitive and non-destructive indicator of the packing density and of the quality of heat contact to the substrate of nanostructured films with grain size in the range 10-500 nm.

Original languageEnglish
Pages (from-to)97-101
Number of pages5
JournalJournal of Nanoparticle Research
Volume2
Issue number1
Publication statusPublished - 2000

Fingerprint

noise temperature
Degradation
degradation
thermal instability
Excess
packing density
Joule heating
thermal noise
noise measurement
thin films
Substrate
resistors
Joule Heating
homogeneity
Thermal noise
adhesion
grain size
Random Networks
Grain Size
Substrates

Keywords

  • Adhesion
  • Defective contact regions
  • Nanostructured layers
  • Percolation model heat transfer
  • Thermal noise

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)

Cite this

A noise temperature analysis of the electrical degradation of thin nanostructured films. / Pennetta, C.; Kiss, L. B.; Gingl, Z.; Reggiani, L.

In: Journal of Nanoparticle Research, Vol. 2, No. 1, 2000, p. 97-101.

Research output: Contribution to journalArticle

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