A fast operation of nanometer-scale metallic memristors: Highly transparent conductance channels in Ag2S devices

Attila Geresdi, Miklós Csontos, Agnes Gubicza, A. Halbritter, G. Mihály

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

The nonlinear transport properties of nanometer-scale junctions formed between an inert metallic tip and an Ag film covered by a thin Ag2S layer are investigated. Suitably prepared samples exhibit memristive behavior with technologically optimal ON and OFF state resistances yielding to resistive switching on the nanosecond time scale. Utilizing point contact Andreev reflection spectroscopy, we studied the nature of electron transport in the active volume of memristive junctions showing that both the ON and OFF states correspond to truly nanometer-scale, highly transparent metallic channels. Our results demonstrate the merits of Ag2S nanojunctions as nanometer-scale memory cells which can be switched by nanosecond voltage pulses.

Original languageEnglish
Pages (from-to)2613-2617
Number of pages5
JournalNanoscale
Volume6
Issue number5
DOIs
Publication statusPublished - Mar 7 2014

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Memristors
Point contacts
Transport properties
Spectroscopy
Data storage equipment
Electric potential
Electron Transport

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

A fast operation of nanometer-scale metallic memristors : Highly transparent conductance channels in Ag2S devices. / Geresdi, Attila; Csontos, Miklós; Gubicza, Agnes; Halbritter, A.; Mihály, G.

In: Nanoscale, Vol. 6, No. 5, 07.03.2014, p. 2613-2617.

Research output: Contribution to journalArticle

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