A contribution to electrochemical C-V measurements on GaAs/GaAlAs multilayer structures

R. Kinder, A. Nemcsics, R. Harman, F. Riesz, B. Pécz

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

GaAs/GaAlAs multilayer structures are investigated by ECV technique on this paper. Two different MBE sample were used for investigation. The sample have a GaAs/GaAlAs junction. One sample is a HBT structure, the other one is a p-i-n photodiode structure. The multilayer structures were tested with different aqueous electrolytes and the ECV results were controlled by SR and TEM measurement, too.

Original languageEnglish
Title of host publicationASDAM 1998 Conference Proceedings
Subtitle of host publication2nd International Conference on Advanced Semiconductor Devices And Microsystems
EditorsFrantisek Uherek, Vladimir Drobny, Juraj Breza, Daniel Donoval
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages215-218
Number of pages4
Volume1998-October
ISBN (Electronic)0780349091, 9780780349094
DOIs
Publication statusPublished - Jan 1 1998
Event2nd International Conference on Advanced Semiconductor Devices And Microsystems, ASDAM 1998 - Smolenice, Slovakia
Duration: Oct 5 1998Oct 7 1998

Other

Other2nd International Conference on Advanced Semiconductor Devices And Microsystems, ASDAM 1998
CountrySlovakia
CitySmolenice
Period10/5/9810/7/98

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Instrumentation

Cite this

Kinder, R., Nemcsics, A., Harman, R., Riesz, F., & Pécz, B. (1998). A contribution to electrochemical C-V measurements on GaAs/GaAlAs multilayer structures. In F. Uherek, V. Drobny, J. Breza, & D. Donoval (Eds.), ASDAM 1998 Conference Proceedings: 2nd International Conference on Advanced Semiconductor Devices And Microsystems (Vol. 1998-October, pp. 215-218). [730202] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ASDAM.1998.730202