A Comparison of the Effects of Neutron and Gamma Radiation in Silicon Photomultipliers

B. Biro, G. David, A. Fenyvesi, J. S. Haggerty, J. Kierstead, E. J. Mannel, T. Majoros, J. Molnar, F. Nagy, S. Stoll, B. Ujvari, C. L. Woody

Research output: Contribution to journalArticle

Abstract

The effects of radiation damage in silicon photomultipliers (SiPMs) from gamma rays have been measured and compared with the damage produced by neutrons. Several types of multipixel photon counters from Hamamatsu were exposed to gamma rays and neutrons at the Solid State Gamma Ray Irradiation Facility (SSGRIF) at the Brookhaven National Laboratory and the Institute for Nuclear Research (Atomki) in Debrecen, Hungary. The gamma ray exposures ranged from 1 krad to 1 Mrad and the neutron exposures ranged from 108 to 1012 n/cm2. The main effect of gamma ray damage is an increase in the noise and leakage current in the irradiated devices, similar to what is seen from neutron damage, but the level of damage is considerably less at comparable high levels of exposure. In addition, the damage from gamma rays saturates after a few hundred krad, while the damage from neutrons shows no sign of saturation, suggestive of different damage mechanisms in the two cases. The change in optical absorption in the window material of the SiPMs due to radiation was also measured. This paper was carried out in order to evaluate the use of SiPMs for particle physics applications with moderate levels of radiation exposures.

Original languageEnglish
Article number8732368
Pages (from-to)1833-1839
Number of pages7
JournalIEEE Transactions on Nuclear Science
Volume66
Issue number7
DOIs
Publication statusPublished - Jul 1 2019

Fingerprint

Photomultipliers
Gamma rays
Neutrons
gamma rays
damage
neutrons
Silicon
silicon
radiation
Radiation
High energy physics
Hungary
Radiation damage
nuclear research
Leakage currents
radiation dosage
Light absorption
radiation damage
Photons
Irradiation

Keywords

  • Calorimeters
  • EIC
  • gamma rays
  • multipixel photon counter (MPPC)
  • neutrons
  • radiation damage
  • silicon photomultiplier (SiPM)
  • sPHENIX

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

Cite this

Biro, B., David, G., Fenyvesi, A., Haggerty, J. S., Kierstead, J., Mannel, E. J., ... Woody, C. L. (2019). A Comparison of the Effects of Neutron and Gamma Radiation in Silicon Photomultipliers. IEEE Transactions on Nuclear Science, 66(7), 1833-1839. [8732368]. https://doi.org/10.1109/TNS.2019.2921102

A Comparison of the Effects of Neutron and Gamma Radiation in Silicon Photomultipliers. / Biro, B.; David, G.; Fenyvesi, A.; Haggerty, J. S.; Kierstead, J.; Mannel, E. J.; Majoros, T.; Molnar, J.; Nagy, F.; Stoll, S.; Ujvari, B.; Woody, C. L.

In: IEEE Transactions on Nuclear Science, Vol. 66, No. 7, 8732368, 01.07.2019, p. 1833-1839.

Research output: Contribution to journalArticle

Biro, B, David, G, Fenyvesi, A, Haggerty, JS, Kierstead, J, Mannel, EJ, Majoros, T, Molnar, J, Nagy, F, Stoll, S, Ujvari, B & Woody, CL 2019, 'A Comparison of the Effects of Neutron and Gamma Radiation in Silicon Photomultipliers', IEEE Transactions on Nuclear Science, vol. 66, no. 7, 8732368, pp. 1833-1839. https://doi.org/10.1109/TNS.2019.2921102
Biro, B. ; David, G. ; Fenyvesi, A. ; Haggerty, J. S. ; Kierstead, J. ; Mannel, E. J. ; Majoros, T. ; Molnar, J. ; Nagy, F. ; Stoll, S. ; Ujvari, B. ; Woody, C. L. / A Comparison of the Effects of Neutron and Gamma Radiation in Silicon Photomultipliers. In: IEEE Transactions on Nuclear Science. 2019 ; Vol. 66, No. 7. pp. 1833-1839.
@article{098c32ebf67c47dcbc2de668b0d095ab,
title = "A Comparison of the Effects of Neutron and Gamma Radiation in Silicon Photomultipliers",
abstract = "The effects of radiation damage in silicon photomultipliers (SiPMs) from gamma rays have been measured and compared with the damage produced by neutrons. Several types of multipixel photon counters from Hamamatsu were exposed to gamma rays and neutrons at the Solid State Gamma Ray Irradiation Facility (SSGRIF) at the Brookhaven National Laboratory and the Institute for Nuclear Research (Atomki) in Debrecen, Hungary. The gamma ray exposures ranged from 1 krad to 1 Mrad and the neutron exposures ranged from 108 to 1012 n/cm2. The main effect of gamma ray damage is an increase in the noise and leakage current in the irradiated devices, similar to what is seen from neutron damage, but the level of damage is considerably less at comparable high levels of exposure. In addition, the damage from gamma rays saturates after a few hundred krad, while the damage from neutrons shows no sign of saturation, suggestive of different damage mechanisms in the two cases. The change in optical absorption in the window material of the SiPMs due to radiation was also measured. This paper was carried out in order to evaluate the use of SiPMs for particle physics applications with moderate levels of radiation exposures.",
keywords = "Calorimeters, EIC, gamma rays, multipixel photon counter (MPPC), neutrons, radiation damage, silicon photomultiplier (SiPM), sPHENIX",
author = "B. Biro and G. David and A. Fenyvesi and Haggerty, {J. S.} and J. Kierstead and Mannel, {E. J.} and T. Majoros and J. Molnar and F. Nagy and S. Stoll and B. Ujvari and Woody, {C. L.}",
year = "2019",
month = "7",
day = "1",
doi = "10.1109/TNS.2019.2921102",
language = "English",
volume = "66",
pages = "1833--1839",
journal = "IEEE Transactions on Nuclear Science",
issn = "0018-9499",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "7",

}

TY - JOUR

T1 - A Comparison of the Effects of Neutron and Gamma Radiation in Silicon Photomultipliers

AU - Biro, B.

AU - David, G.

AU - Fenyvesi, A.

AU - Haggerty, J. S.

AU - Kierstead, J.

AU - Mannel, E. J.

AU - Majoros, T.

AU - Molnar, J.

AU - Nagy, F.

AU - Stoll, S.

AU - Ujvari, B.

AU - Woody, C. L.

PY - 2019/7/1

Y1 - 2019/7/1

N2 - The effects of radiation damage in silicon photomultipliers (SiPMs) from gamma rays have been measured and compared with the damage produced by neutrons. Several types of multipixel photon counters from Hamamatsu were exposed to gamma rays and neutrons at the Solid State Gamma Ray Irradiation Facility (SSGRIF) at the Brookhaven National Laboratory and the Institute for Nuclear Research (Atomki) in Debrecen, Hungary. The gamma ray exposures ranged from 1 krad to 1 Mrad and the neutron exposures ranged from 108 to 1012 n/cm2. The main effect of gamma ray damage is an increase in the noise and leakage current in the irradiated devices, similar to what is seen from neutron damage, but the level of damage is considerably less at comparable high levels of exposure. In addition, the damage from gamma rays saturates after a few hundred krad, while the damage from neutrons shows no sign of saturation, suggestive of different damage mechanisms in the two cases. The change in optical absorption in the window material of the SiPMs due to radiation was also measured. This paper was carried out in order to evaluate the use of SiPMs for particle physics applications with moderate levels of radiation exposures.

AB - The effects of radiation damage in silicon photomultipliers (SiPMs) from gamma rays have been measured and compared with the damage produced by neutrons. Several types of multipixel photon counters from Hamamatsu were exposed to gamma rays and neutrons at the Solid State Gamma Ray Irradiation Facility (SSGRIF) at the Brookhaven National Laboratory and the Institute for Nuclear Research (Atomki) in Debrecen, Hungary. The gamma ray exposures ranged from 1 krad to 1 Mrad and the neutron exposures ranged from 108 to 1012 n/cm2. The main effect of gamma ray damage is an increase in the noise and leakage current in the irradiated devices, similar to what is seen from neutron damage, but the level of damage is considerably less at comparable high levels of exposure. In addition, the damage from gamma rays saturates after a few hundred krad, while the damage from neutrons shows no sign of saturation, suggestive of different damage mechanisms in the two cases. The change in optical absorption in the window material of the SiPMs due to radiation was also measured. This paper was carried out in order to evaluate the use of SiPMs for particle physics applications with moderate levels of radiation exposures.

KW - Calorimeters

KW - EIC

KW - gamma rays

KW - multipixel photon counter (MPPC)

KW - neutrons

KW - radiation damage

KW - silicon photomultiplier (SiPM)

KW - sPHENIX

UR - http://www.scopus.com/inward/record.url?scp=85069542052&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85069542052&partnerID=8YFLogxK

U2 - 10.1109/TNS.2019.2921102

DO - 10.1109/TNS.2019.2921102

M3 - Article

VL - 66

SP - 1833

EP - 1839

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

SN - 0018-9499

IS - 7

M1 - 8732368

ER -