A comparative study of the structure of evaporated and glow discharge silicon

Barna, P. B. Barna, G. Radnócute;czi, L. Tóth, P. Thomas

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Abstract

The structure of evaporated amorphous silicon and amorphous silicon prepared by glow discharge technique is investigated using phase contrast electron microscopy and electron diffraction. While evaporated Si shows a supernetwork of density fluctuations commonly observed in evaporated amorphous tetrahedrally bonded semiconductors, glow discharge Si shows no such quasiperiodic heterogeneous density fluctuation. Electron diffraction patterns are obtained using a translation detector, which directly measures the electron intensity in the image plane of the electron microscope. From the resulting RDF it is concluded, that there is a higher degree of local order in glow discharge Si.

Original languageEnglish
Pages (from-to)81-84
Number of pages4
Journalphysica status solidi (a)
Volume41
Issue number1
DOIs
Publication statusPublished - May 16 1977

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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