A comparative study of the morphology of 3C-SiC grown at different C/Si ratios

G. Attolini, B. E. Watts, M. Bosi, F. Rossi, F. Riesz

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

A comparative study of the morphology of 3C-SiC films prepared with different C:Si ratios is presented. The silane precursor controls the growth rate at all values of C:Si ratio but combined of observations using Atomic Force Microscopy (AFM) and Scanning Electron Microscopy (SEM) indicates that the C:Si ratio is critical in determining the grain size and at values of C:Si close to 1 texturing and faceting become evident. Makyoh Topography reveals various surface defects, a slight mesoscale roughness and bending of the epiwafers.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2008
Subtitle of host publicationECSCRM 2008
Pages153-156
Number of pages4
DOIs
Publication statusPublished - Dec 1 2009
Event7th European Conference on Silicon Carbide and Related Materials, ECSCRM 2008 - Barcelona, Spain
Duration: Sep 7 2008Sep 11 2008

Publication series

NameMaterials Science Forum
Volume615 617
ISSN (Print)0255-5476

Other

Other7th European Conference on Silicon Carbide and Related Materials, ECSCRM 2008
CountrySpain
CityBarcelona
Period9/7/089/11/08

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Keywords

  • C:Si ratio
  • Makyoh topography
  • Surface morphology
  • Vapour phase epitaxy

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Attolini, G., Watts, B. E., Bosi, M., Rossi, F., & Riesz, F. (2009). A comparative study of the morphology of 3C-SiC grown at different C/Si ratios. In Silicon Carbide and Related Materials 2008: ECSCRM 2008 (pp. 153-156). (Materials Science Forum; Vol. 615 617). https://doi.org/10.4028/www.scientific.net/MSF.615-617.153