A biased percolation model for the analysis of electronic-device degradation

Z. Gingl, C. Pennetta, L. B. Kiss, L. Reggiani

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The biased percolation model is proposed for investigating device degradation and failure associated with the generation of defects due to local Joule heating. The degradation processes of a thin conducting or semiconducting film is monitored by a set of relevant indicators, such as: the evolution of damage pattern, the current distribution, the film resistance and its fluctuations, the defect concentration, the film lifetime, etc. The conductor-insulator (CI) and conductor-superconductor (CS) like degradation processes are considered. The results can be used to propose non-destructive indicators to test the reliability of samples and to interpret the corresponding experiments.

Original languageEnglish
Pages (from-to)515-521
Number of pages7
JournalMicroelectronics Reliability
Volume38
Issue number4
DOIs
Publication statusPublished - Jan 1 1998

    Fingerprint

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Safety, Risk, Reliability and Quality
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this