μ-SR investigations in silicon

T. N. Mamedov, K. I. Gritsaj, A. V. Stoykov, D. G. Andrianov, V. N. Gorelkin, D. Herlach, U. Zimmermann, O. Kormann, J. Major, M. Schefzik

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Results on the temperature dependence of the residual polarization of negative muons in silicon with phosphorus (4.5×1018, 2.3×1015, and 3.2×1012 cm-3) and aluminum (2.4×1018 and 2×1014 cm-3) impurities are presented. The muon spin rotation (μSR) experiments were carried out in a magnetic field of 0.2 T and in the temperature range 4.2-300 K. In all investigated samples a relaxation of the muon spin and a shift of the spin-precession frequency were observed. The frequency shift (relative to the room-temperature value) amounts to 7×10-3 at 15 K. In the sample with a high concentration of phosphorus impurity (4.5×1018 cm-3) damped and undamped components of the muon spin polarization were observed at TμAl) is estimated on the basis of the muon spin precession frequency shift data. The temperature dependence of the spin-lattice relaxation rate of the magnetic moment of the shallow acceptor centre in silicon in the absence of external stress is determined for the first time. It is found that the relaxation rate is well approximated by the power function v(T) = CTq, where the parameter q lies between 2 and 3.

Original languageEnglish
Pages (from-to)574-577
Number of pages4
JournalPhysica B: Condensed Matter
Volume289-290
DOIs
Publication statusPublished - Aug 2000

Fingerprint

Silicon
muons
silicon
precession
Phosphorus
frequency shift
phosphorus
Impurities
muon spin rotation
impurities
Temperature
temperature dependence
Spin polarization
Spin-lattice relaxation
polarization
Magnetic moments
Aluminum
spin-lattice relaxation
magnetic moments
Polarization

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Mamedov, T. N., Gritsaj, K. I., Stoykov, A. V., Andrianov, D. G., Gorelkin, V. N., Herlach, D., ... Schefzik, M. (2000). μ-SR investigations in silicon. Physica B: Condensed Matter, 289-290, 574-577. https://doi.org/10.1016/S0921-4526(00)00261-1

μ-SR investigations in silicon. / Mamedov, T. N.; Gritsaj, K. I.; Stoykov, A. V.; Andrianov, D. G.; Gorelkin, V. N.; Herlach, D.; Zimmermann, U.; Kormann, O.; Major, J.; Schefzik, M.

In: Physica B: Condensed Matter, Vol. 289-290, 08.2000, p. 574-577.

Research output: Contribution to journalArticle

Mamedov, TN, Gritsaj, KI, Stoykov, AV, Andrianov, DG, Gorelkin, VN, Herlach, D, Zimmermann, U, Kormann, O, Major, J & Schefzik, M 2000, 'μ-SR investigations in silicon', Physica B: Condensed Matter, vol. 289-290, pp. 574-577. https://doi.org/10.1016/S0921-4526(00)00261-1
Mamedov TN, Gritsaj KI, Stoykov AV, Andrianov DG, Gorelkin VN, Herlach D et al. μ-SR investigations in silicon. Physica B: Condensed Matter. 2000 Aug;289-290:574-577. https://doi.org/10.1016/S0921-4526(00)00261-1
Mamedov, T. N. ; Gritsaj, K. I. ; Stoykov, A. V. ; Andrianov, D. G. ; Gorelkin, V. N. ; Herlach, D. ; Zimmermann, U. ; Kormann, O. ; Major, J. ; Schefzik, M. / μ-SR investigations in silicon. In: Physica B: Condensed Matter. 2000 ; Vol. 289-290. pp. 574-577.
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AU - Gorelkin, V. N.

AU - Herlach, D.

AU - Zimmermann, U.

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AU - Schefzik, M.

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