μ- SR in semiconductorsSR in semiconductors

M. Koch, K. Maier, J. Major, A. Seeger, W. Sigle, W. Staiger, W. Templ, E. Widmann, R. Abela, V. Claus, M. Hampele, D. Herlach

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

μ- SR experiments have been performed on Si between room temperature and 6 K. The amplitude of the muon spin precession signal in an applied magnetic field of 0.04 T decreased below 30 K. A zero-field measurement at 6 K revealed a μ- spin precession frequency of 650 MHz. The muonic atom represents an aluminium acceptor in the silicon matrix, its electronic state is responsible for the μSR signal. A possible influence of the γ recoil produced by the X-ray cascade is discussed.

Original languageEnglish
Pages (from-to)1039-1045
Number of pages7
JournalHyperfine Interactions
Volume65
Issue number1-4
DOIs
Publication statusPublished - Feb 1991

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Nuclear and High Energy Physics
  • Condensed Matter Physics
  • Physical and Theoretical Chemistry

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    Koch, M., Maier, K., Major, J., Seeger, A., Sigle, W., Staiger, W., Templ, W., Widmann, E., Abela, R., Claus, V., Hampele, M., & Herlach, D. (1991). μ- SR in semiconductorsSR in semiconductors. Hyperfine Interactions, 65(1-4), 1039-1045. https://doi.org/10.1007/BF02397760