μ-spin rotation study of the temperature-dependent relaxation rate of acceptor centers in silicon

T. N. Mamedov, D. G. Andrianov, D. Gerlach, K. I. Gritsaǐ, V. N. Gorelkin, O. Cormann, J. Major, A. V. Stoǐkov, M. Shevchik, U. Zimmerman

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Temperature-dependent remanent polarization of negative muons in a silicon crystal doped with phosphorus (3.2 × 1012,2.3 × 1015, and 4.5 × 1018 cm-3) and aluminum (2 × 1014 and 2.4 × 1018 cm-3) was examined. Measurements were made over the temperature range 4-300 K in a magnetic field of 2000 G perpendicular to the muon spin. Temperature dependence of the relaxation rate was determined for the magnetic moment of a shallow Al acceptor center in a nondeformed silicon sample, and the hyperfine interaction constant was estimated for the interaction between the magnetic moments of muon and electron shell of the muonic μAl atom in silicon.

Original languageEnglish
Pages (from-to)438-441
Number of pages4
JournalJETP Letters
Volume71
Issue number10
Publication statusPublished - May 25 2000

Fingerprint

muons
silicon
magnetic moments
doped crystals
temperature
phosphorus
interactions
aluminum
temperature dependence
polarization
magnetic fields
atoms
electrons

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Mamedov, T. N., Andrianov, D. G., Gerlach, D., Gritsaǐ, K. I., Gorelkin, V. N., Cormann, O., ... Zimmerman, U. (2000). μ-spin rotation study of the temperature-dependent relaxation rate of acceptor centers in silicon. JETP Letters, 71(10), 438-441.

μ-spin rotation study of the temperature-dependent relaxation rate of acceptor centers in silicon. / Mamedov, T. N.; Andrianov, D. G.; Gerlach, D.; Gritsaǐ, K. I.; Gorelkin, V. N.; Cormann, O.; Major, J.; Stoǐkov, A. V.; Shevchik, M.; Zimmerman, U.

In: JETP Letters, Vol. 71, No. 10, 25.05.2000, p. 438-441.

Research output: Contribution to journalArticle

Mamedov, TN, Andrianov, DG, Gerlach, D, Gritsaǐ, KI, Gorelkin, VN, Cormann, O, Major, J, Stoǐkov, AV, Shevchik, M & Zimmerman, U 2000, 'μ-spin rotation study of the temperature-dependent relaxation rate of acceptor centers in silicon', JETP Letters, vol. 71, no. 10, pp. 438-441.
Mamedov TN, Andrianov DG, Gerlach D, Gritsaǐ KI, Gorelkin VN, Cormann O et al. μ-spin rotation study of the temperature-dependent relaxation rate of acceptor centers in silicon. JETP Letters. 2000 May 25;71(10):438-441.
Mamedov, T. N. ; Andrianov, D. G. ; Gerlach, D. ; Gritsaǐ, K. I. ; Gorelkin, V. N. ; Cormann, O. ; Major, J. ; Stoǐkov, A. V. ; Shevchik, M. ; Zimmerman, U. / μ-spin rotation study of the temperature-dependent relaxation rate of acceptor centers in silicon. In: JETP Letters. 2000 ; Vol. 71, No. 10. pp. 438-441.
@article{0c202ca4eab846349abde4fa9ced18a5,
title = "μ-spin rotation study of the temperature-dependent relaxation rate of acceptor centers in silicon",
abstract = "Temperature-dependent remanent polarization of negative muons in a silicon crystal doped with phosphorus (3.2 × 1012,2.3 × 1015, and 4.5 × 1018 cm-3) and aluminum (2 × 1014 and 2.4 × 1018 cm-3) was examined. Measurements were made over the temperature range 4-300 K in a magnetic field of 2000 G perpendicular to the muon spin. Temperature dependence of the relaxation rate was determined for the magnetic moment of a shallow Al acceptor center in a nondeformed silicon sample, and the hyperfine interaction constant was estimated for the interaction between the magnetic moments of muon and electron shell of the muonic μAl atom in silicon.",
author = "Mamedov, {T. N.} and Andrianov, {D. G.} and D. Gerlach and Gritsaǐ, {K. I.} and Gorelkin, {V. N.} and O. Cormann and J. Major and Stoǐkov, {A. V.} and M. Shevchik and U. Zimmerman",
year = "2000",
month = "5",
day = "25",
language = "English",
volume = "71",
pages = "438--441",
journal = "JETP Letters",
issn = "0021-3640",
publisher = "Maik Nauka-Interperiodica Publishing",
number = "10",

}

TY - JOUR

T1 - μ-spin rotation study of the temperature-dependent relaxation rate of acceptor centers in silicon

AU - Mamedov, T. N.

AU - Andrianov, D. G.

AU - Gerlach, D.

AU - Gritsaǐ, K. I.

AU - Gorelkin, V. N.

AU - Cormann, O.

AU - Major, J.

AU - Stoǐkov, A. V.

AU - Shevchik, M.

AU - Zimmerman, U.

PY - 2000/5/25

Y1 - 2000/5/25

N2 - Temperature-dependent remanent polarization of negative muons in a silicon crystal doped with phosphorus (3.2 × 1012,2.3 × 1015, and 4.5 × 1018 cm-3) and aluminum (2 × 1014 and 2.4 × 1018 cm-3) was examined. Measurements were made over the temperature range 4-300 K in a magnetic field of 2000 G perpendicular to the muon spin. Temperature dependence of the relaxation rate was determined for the magnetic moment of a shallow Al acceptor center in a nondeformed silicon sample, and the hyperfine interaction constant was estimated for the interaction between the magnetic moments of muon and electron shell of the muonic μAl atom in silicon.

AB - Temperature-dependent remanent polarization of negative muons in a silicon crystal doped with phosphorus (3.2 × 1012,2.3 × 1015, and 4.5 × 1018 cm-3) and aluminum (2 × 1014 and 2.4 × 1018 cm-3) was examined. Measurements were made over the temperature range 4-300 K in a magnetic field of 2000 G perpendicular to the muon spin. Temperature dependence of the relaxation rate was determined for the magnetic moment of a shallow Al acceptor center in a nondeformed silicon sample, and the hyperfine interaction constant was estimated for the interaction between the magnetic moments of muon and electron shell of the muonic μAl atom in silicon.

UR - http://www.scopus.com/inward/record.url?scp=0012687762&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0012687762&partnerID=8YFLogxK

M3 - Article

VL - 71

SP - 438

EP - 441

JO - JETP Letters

JF - JETP Letters

SN - 0021-3640

IS - 10

ER -