Γ-X transfer rates in type II (Al)GaAs / AlAs superlattices

J. Feldmann, R. Sattmann, E. O. Göbel, J. Nunnenkamp, J. Kuhl, J. Hebling, K. Ploog, R. Muralidharan, P. Dawson, C. T. Foxon

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

We have experimentally determined the Γ-X transfer rates in type II GaAs/AlAs short period superlattices as well as in type II AlxGa1-xAs/AlAs superlattices by femtosecond optical pump and probe spectroscopy. Γ-X transfer times in the range from 120 fs up to 22 ps are observed for samples with different GaAs- or AlxGa1-xAs layer-thicknesses. The drastic increase of the transfer times with increasing layer-thickness can be related to a decreasing overlap of the Γ- and X-envelope wavefunctions.

Original languageEnglish
Pages (from-to)1713-1717
Number of pages5
JournalSolid-State Electronics
Volume32
Issue number12
DOIs
Publication statusPublished - 1989

Fingerprint

Superlattices
superlattices
Wave functions
Pumps
Spectroscopy
envelopes
pumps
probes
spectroscopy
gallium arsenide

Keywords

  • carrier relaxation
  • intervalley scattering
  • real space transfer
  • Short period superlattices
  • type II superlattices

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Feldmann, J., Sattmann, R., Göbel, E. O., Nunnenkamp, J., Kuhl, J., Hebling, J., ... Foxon, C. T. (1989). Γ-X transfer rates in type II (Al)GaAs / AlAs superlattices. Solid-State Electronics, 32(12), 1713-1717. https://doi.org/10.1016/0038-1101(89)90300-6

Γ-X transfer rates in type II (Al)GaAs / AlAs superlattices. / Feldmann, J.; Sattmann, R.; Göbel, E. O.; Nunnenkamp, J.; Kuhl, J.; Hebling, J.; Ploog, K.; Muralidharan, R.; Dawson, P.; Foxon, C. T.

In: Solid-State Electronics, Vol. 32, No. 12, 1989, p. 1713-1717.

Research output: Contribution to journalArticle

Feldmann, J, Sattmann, R, Göbel, EO, Nunnenkamp, J, Kuhl, J, Hebling, J, Ploog, K, Muralidharan, R, Dawson, P & Foxon, CT 1989, 'Γ-X transfer rates in type II (Al)GaAs / AlAs superlattices', Solid-State Electronics, vol. 32, no. 12, pp. 1713-1717. https://doi.org/10.1016/0038-1101(89)90300-6
Feldmann, J. ; Sattmann, R. ; Göbel, E. O. ; Nunnenkamp, J. ; Kuhl, J. ; Hebling, J. ; Ploog, K. ; Muralidharan, R. ; Dawson, P. ; Foxon, C. T. / Γ-X transfer rates in type II (Al)GaAs / AlAs superlattices. In: Solid-State Electronics. 1989 ; Vol. 32, No. 12. pp. 1713-1717.
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AU - Sattmann, R.

AU - Göbel, E. O.

AU - Nunnenkamp, J.

AU - Kuhl, J.

AU - Hebling, J.

AU - Ploog, K.

AU - Muralidharan, R.

AU - Dawson, P.

AU - Foxon, C. T.

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AB - We have experimentally determined the Γ-X transfer rates in type II GaAs/AlAs short period superlattices as well as in type II AlxGa1-xAs/AlAs superlattices by femtosecond optical pump and probe spectroscopy. Γ-X transfer times in the range from 120 fs up to 22 ps are observed for samples with different GaAs- or AlxGa1-xAs layer-thicknesses. The drastic increase of the transfer times with increasing layer-thickness can be related to a decreasing overlap of the Γ- and X-envelope wavefunctions.

KW - carrier relaxation

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