• 1159 Citations
  • 18 h-Index
1986 …2015

Research output per year

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Research Output

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Article
2001

Electrical and photoelectrical behaviour of CdTe structures

Horváth, Z. J., Makhniy, V. P., Demych, M. V., Van Tuyen, V., Balázs, J., Réti, I., Gorley, P. M., Ulyanitsky, K. S., Horley, P. P., Stifter, D., Sitter, H. & Dózsa, L., Mar 22 2001, In : Materials Science and Engineering B: Solid-State Materials for Advanced Technology. 80, 1-3, p. 156-159 4 p.

Research output: Contribution to journalArticle

Engineered Schottky barriers on n-In0.35Ga0.65As

Horváth, Z. J., Van Tuyen, V., Franchi, S., Bosacchi, A., Frigeri, P., Gombia, E., Mosca, R., Pal, D., Kalmár, I. & Szentpáli, B., Mar 22 2001, In : Materials Science and Engineering B: Solid-State Materials for Advanced Technology. 80, 1-3, p. 248-251 4 p.

Research output: Contribution to journalArticle

4 Citations (Scopus)
2000

Electrical and low frequency noise properties of Gd and GdCo silicide contacts on n-type Si

Dózsa, L., Horváth, Z. J., Molnár, G. L., Petõ, G., Dimitriadis, C. A., Papadimitriou, L., Brini, J. & Kamarinos, G., Jul 1 2000, In : Semiconductor Science and Technology. 15, 7, p. 653-657 5 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)
1999

Effect of defect bands on the electrical characteristics of irradiated GaAs and Si

Horváth, Z. J., Gombia, E., Pal, D., Kovacsics, C., Capannese, G., Pintér, I., Ádám, M., Mosca, R., Van Tuyen, V. & Dózsa, L., Jan 1 1999, In : Physica Status Solidi (A) Applied Research. 171, 1, p. 311-317 7 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)
1998

Anomalous temperature dependence of series resistance in Ag/Si and Al/Si Schottky junctions

Horváth, Z. J., Ádám, M., Pintér, I., Cvikl, B., Korošak, D., Mrdjen, T., Van Tuyen, V., Makaró, Z., Dücsö, C. & Bársony, I., Jul 1 1998, In : Vacuum. 50, 3-4, p. 417-419 3 p.

Research output: Contribution to journalArticle

7 Citations (Scopus)

Comparative study of I-V characteristics of the ICB deposited Ag/n-Si(111) and Ag/p-Si(100) Schottky junctions

Cvikl, B., Korošak, D. & Horváth, Z. J., Jul 1 1998, In : Vacuum. 50, 3-4, p. 385-393 9 p.

Research output: Contribution to journalArticle

16 Citations (Scopus)

Electrical characterisation of Al/n-Si/p-Si Schottky junctions prepared by plasma immersion implantation

Horváth, Z. J., Ádám, M., Dücsö, C., Pintér, I., Van Tuyen, V., Bársony, I., Gombia, E., Mosca, R. & Makaró, Z. S., Mar 16 1998, In : Solid-State Electronics. 42, 2, p. 221-228 8 p.

Research output: Contribution to journalArticle

23 Citations (Scopus)

Electrical characterization of Au/SiOx/n-GaAs junctions

Ivanèo, J., Horváth, Z. J., Van Tuyen, V., Coluzza, C., Almeida, J., Terrasi, A., Pécz, B., Vincze, G. & Margaritondo, G., Mar 16 1998, In : Solid-State Electronics. 42, 2, p. 229-233 5 p.

Research output: Contribution to journalArticle

3 Citations (Scopus)
1995

Comment on "Breakdown voltage of high-voltage GaAs Schottky diodes"

Horváth, Z. J., Oct 1995, In : Solid State Electronics. 38, 10, p. 1835-1836 2 p.

Research output: Contribution to journalArticle

Current-voltage anomalies on polycrystalline GdSi2/ p-Si Schottky junctions due to grain boundaries

Kovács, B., Molnár, G., Dózsa, L., Petö, G., Andrási, M., Karányi, J. & Horváth, Z. J., Jan 1 1995, In : Vacuum. 46, 8-10, p. 983-985 3 p.

Research output: Contribution to journalArticle

6 Citations (Scopus)

Electrical behaviour of epitaxial Al/n-Al0.25Ga0.75As junctions: effect of the composition of undoped AlxGa1 - xAs cap layer

Horváth, Z. J., Bosacchi, A., Franchi, S., Gombia, E., Mosca, R. & Biondelli, D., Jan 1 1995, In : Vacuum. 46, 8-10, p. 959-961 3 p.

Research output: Contribution to journalArticle

2 Citations (Scopus)

Investigation of electrical properties of Au porous Si Si structures

Ádám, M., Horváth, Z. J., Bársony, I., Szölgyémy, L., Vázsonyi, E. & Van Tuyen, V., Jan 15 1995, In : Thin Solid Films. 255, 1-2, p. 266-268 3 p.

Research output: Contribution to journalArticle

24 Citations (Scopus)

Lateral distribution of Schottky barrier height: A theoretical approach

Horváth, Z. J., Jan 1 1995, In : Vacuum. 46, 8-10, p. 963-966 4 p.

Research output: Contribution to journalArticle

27 Citations (Scopus)
1994

Anomalous thermionic-field emission in epitaxial Al/n-AlGaAs junctions

Horváth, Z. J., Bosacchi, A., Franchi, S., Gombia, E., Mosca, R. & Motta, A., Dec 1994, In : Materials Science and Engineering B. 28, 1-3, p. 429-432 4 p.

Research output: Contribution to journalArticle

26 Citations (Scopus)

Effect of the ion bombardment on the apparent barrier height in GaAs Schottky junctions

Horváth, Z. J., Mar 1 1994, In : Acta Physica Hungarica. 74, 1-2, p. 57-64 8 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)

Electrical behaviour of ion-mixed Au/n-GaAs contacts

Horváth, Z. J., Pécz, B., Jároli, E. & Németh-Sallay, M., Mar 1 1994, In : Acta Physica Hungarica. 74, 1-2, p. 65-71 7 p.

Research output: Contribution to journalArticle

1993

Effect of crystallization on the electrical and interface characteristics of GdSi2/p-Si Schottky junctions

Horváth, Z. J., Molnár, G., Kovács, B., Petö, G., Andrási, M. & Szentpáli, B., Jan 1 1993, In : Journal of Crystal Growth. 126, 1, p. 163-167 5 p.

Research output: Contribution to journalArticle

17 Citations (Scopus)
1992

The effect of ion beam treatment and subsequent annealing on Au/GaAs contacts

Pécz, B., Radnóczi, G., Horváth, Z. J., Barna, P. B., Jároli, E. & Gyulai, J., Dec 1 1992, In : Journal of Applied Physics. 71, 7, p. 3408-3413 6 p.

Research output: Contribution to journalArticle

5 Citations (Scopus)
1990

Near-interface concentration reduction in n-type Au/CrGaAs Schottky contacts

Horváth, Z. J., Gyúró, I., Németh-Sallay, M. & Tüttö, P., 1990, In : Vacuum. 40, 1-2, p. 201-203 3 p.

Research output: Contribution to journalArticle

5 Citations (Scopus)

The effect of the metal-semiconductor interface on the barrier height in GaAs Schottky junctions

Horváth, Z. J., 1990, In : Vacuum. 41, 4-6, p. 804-806 3 p.

Research output: Contribution to journalArticle

5 Citations (Scopus)
9 Citations (Scopus)
1989
15 Citations (Scopus)
1988
38 Citations (Scopus)
1987

GaAs VPE layers for microwave Schottky tuning varactors

Gyuró, I. & Horváth, Z. J., Apr 1 1987, In : Acta Physica Hungarica. 61, 2, p. 165-168 4 p.

Research output: Contribution to journalArticle

SEM investigations of macroscopic crystal defects in GaAs VPE layers

Gyúró, I., Dobos, L., Horváth, Z. J., Pál, E. K., Fineberg, V. I., Konakova, R. V. & Tkhorik, Y. A., Apr 1 1987, In : Acta Physica Hungarica. 61, 2, p. 263-266 4 p.

Research output: Contribution to journalArticle

1986

GaAs Schottky varactors for linear frequency tuning in X‐band

Horváth, Z. J., Gyúbó, I., Németh‐Sallay, M., Szentpáli, B. & Kazi, K., Apr 16 1986, In : physica status solidi (a). 94, 2, p. 719-726 8 p.

Research output: Contribution to journalArticle

12 Citations (Scopus)