• 1159 Citations
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1986 …2015

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Al and Ti/Al contacts on n-GaN

Dobos, L., Pécz, B., Tóth, L., Horváth, Z. J., Horváth, Z. E., Horváth, E., Tóth, A., Beaumont, B. & Bougrioua, Z., Aug 25 2009, In : Vacuum. 84, 1, p. 228-230 3 p.

Research output: Contribution to journalArticle

6 Citations (Scopus)

Annealed Ti/Cr/Al contacts on n-GaN

Dobos, L., Pécz, B., Tóth, L., Horváth, Z. J., Horváth, Z. E., Tóth, A. L. & Poisson, M. A., Jan 1 2014, In : Vacuum. 100, p. 46-49 4 p.

Research output: Contribution to journalArticle

7 Citations (Scopus)

Anomalous electrical properties of Si/Si1 - X Ge x heterostructures with an electron transport channel in Si layers

Orlov, L. K., Horvath, Z. J., Orlov, M. L., Lonchakov, A. T., Ivina, N. L. & Dobos, L., Feb 2008, In : Physics of the Solid State. 50, 2, p. 330-340 11 p.

Research output: Contribution to journalArticle

4 Citations (Scopus)

Anomalous temperature dependence of series resistance in Ag/Si and Al/Si Schottky junctions

Horváth, Z. J., Ádám, M., Pintér, I., Cvikl, B., Korošak, D., Mrdjen, T., Van Tuyen, V., Makaró, Z., Dücsö, C. & Bársony, I., Jul 1 1998, In : Vacuum. 50, 3-4, p. 417-419 3 p.

Research output: Contribution to journalArticle

7 Citations (Scopus)

Anomalous thermionic-field emission in epitaxial Al/n-AlGaAs junctions

Horváth, Z. J., Bosacchi, A., Franchi, S., Gombia, E., Mosca, R. & Motta, A., Dec 1994, In : Materials Science and Engineering B. 28, 1-3, p. 429-432 4 p.

Research output: Contribution to journalArticle

26 Citations (Scopus)

Bilayer Cr/Au contacts on n-GaN

Dobos, L., Tóth, L., Pécz, B., Horváth, Z. J., Horváth, Z. E., Tóth, A. L., Beaumont, B. & Bougrioua, Z., Jan 27 2012, In : Vacuum. 86, 6, p. 769-772 4 p.

Research output: Contribution to journalArticle

Charging behavior of MNOS and SONOS memory structures with embedded semiconductor nanocrystals-computer simulation

Molnár, K. Z., Turmezei, P. & Horváth, Z. J., Nov 18 2013, In : Animal. 1534, 1, p. A25-A30

Research output: Contribution to journalArticle

Charging behavior of silicon nitride based non-volatile memory structures with embedded semiconductor nanocrystals

Horváth, Z. J., Basa, P., Jászi, T., Molnár, K. Z., Pap, A. E. & Molnár, G., Jan 1 2013, In : Applied Surface Science. 269, p. 23-28 6 p.

Research output: Contribution to journalArticle

4 Citations (Scopus)

Charging behaviour of metal-nitride-oxide-semiconductor memory structures with embedded Si or Ge nanocrystals

Horváth, Z. J., Basa, P., Molnár, K. Z., Jászi, T., Pap, A. E., Molnár, G., Dobos, L., Tóth, L. & Pécz, B., Apr 1 2013, In : Nanoscience and Nanotechnology Letters. 5, 4, p. 513-517 5 p.

Research output: Contribution to journalArticle

2 Citations (Scopus)

Charging behaviour of MNOS structures with embedded Ge nanocrystals

Horváth, Z. J., Molnár, K. Z., Molnár, G., Basa, P., Jászi, T., Pap, A. E., Lovassy, R. & Turmezei, P., Jun 1 2012, In : Physica Status Solidi (C) Current Topics in Solid State Physics. 9, 6, p. 1370-1373 4 p.

Research output: Contribution to journalArticle

7 Citations (Scopus)

Charging effects in CdSe nanocrystals embedded in SiO2 matrix produced by rf magnetron sputtering

Levichev, S., Chahboun, A., Basa, P., Rolo, A. G., Barradas, N. P., Alves, E., Horvath, Z. J., Conde, O. & Gomes, M. J. M., Dec 1 2008, In : Microelectronic Engineering. 85, 12, p. 2374-2377 4 p.

Research output: Contribution to journalArticle

12 Citations (Scopus)

Comment on "Breakdown voltage of high-voltage GaAs Schottky diodes"

Horváth, Z. J., Oct 1995, In : Solid State Electronics. 38, 10, p. 1835-1836 2 p.

Research output: Contribution to journalArticle

Comparative study of I-V characteristics of the ICB deposited Ag/n-Si(111) and Ag/p-Si(100) Schottky junctions

Cvikl, B., Korošak, D. & Horváth, Z. J., Jul 1 1998, In : Vacuum. 50, 3-4, p. 385-393 9 p.

Research output: Contribution to journalArticle

16 Citations (Scopus)

Current instabilities in GaAs/InAs quantum dot structures

Horváth, Z. J., Podoŕ, B., Frigeri, P., Franchi, S., Gombia, E., Mosca, R., Van Tuyen, V. & Dózsa, L., Jan 1 2001, In : Proceedings of SPIE - The International Society for Optical Engineering. 4413, p. 153-156 4 p.

Research output: Contribution to journalArticle

Current instabilities in GaAs/InAs self-aggregated quantum dot structures

Horváth, Z. J., Frigeri, P., Franchi, S., Van Tuyen, V., Gombia, E., Mosca, R. & Dózsa, L., May 8 2002, In : Applied Surface Science. 190, 1-4, p. 222-225 4 p.

Research output: Contribution to journalArticle

6 Citations (Scopus)

Current-voltage anomalies on polycrystalline GdSi2/ p-Si Schottky junctions due to grain boundaries

Kovács, B., Molnár, G., Dózsa, L., Petö, G., Andrási, M., Karányi, J. & Horváth, Z. J., Jan 1 1995, In : Vacuum. 46, 8-10, p. 983-985 3 p.

Research output: Contribution to journalArticle

6 Citations (Scopus)

Direct correlation between modulus and the crystalline structure in isotactic polypropylene

Menyhárd, A., Suba, P., László, Z., Fekete, H. M., Mester, O., Horváth, Z., Vörös, G., Varga, J. & Móczó, J., Mar 1 2015, In : Express Polymer Letters. 9, 3, p. 308-320 13 p.

Research output: Contribution to journalArticle

28 Citations (Scopus)
38 Citations (Scopus)

Effect of crystal defects on the electrical behaviour of InP and SiGe epitaxial structures

Horváth, Z. J., Orlov, L. K., Rakovics, V., Ivina, N. L., Tóth, A. L., Demidov, E. S., Riesz, F., Vdovin, V. I. & Pászti, Z., Jul 1 2004, In : EPJ Applied Physics. 27, 1-3, p. 189-192 4 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)

Effect of crystallization on the electrical and interface characteristics of GdSi2/p-Si Schottky junctions

Horváth, Z. J., Molnár, G., Kovács, B., Petö, G., Andrási, M. & Szentpáli, B., Jan 1 1993, In : Journal of Crystal Growth. 126, 1, p. 163-167 5 p.

Research output: Contribution to journalArticle

17 Citations (Scopus)

Effect of defect bands on the electrical characteristics of irradiated GaAs and Si

Horváth, Z. J., Gombia, E., Pal, D., Kovacsics, C., Capannese, G., Pintér, I., Ádám, M., Mosca, R., Van Tuyen, V. & Dózsa, L., Jan 1 1999, In : Physica Status Solidi (A) Applied Research. 171, 1, p. 311-317 7 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)

Effect of location of Si or Ge nanocrystals on the memory behavior of MNOS structures

Horváth, Z. J., Basa, P., Molnár, K. Z., Molnár, G., Jászi, T. & Pap, A. E., Jun 2013, In : Physica E: Low-Dimensional Systems and Nanostructures. 51, p. 104-110 7 p.

Research output: Contribution to journalArticle

8 Citations (Scopus)

Effect of nitrogen doping on photoresponsivity of ZnO films

Ievtushenko, A. I., Lashkarev, G. V., Lazorenko, V. I., Karpyna, V. A., Dusheyko, M. G., Tkach, V. M., Kosyachenko, L. A., Sklyarchuk, V. M., Sklyarchuk, O. F., Avramenko, K. A., Strelchuk, V. V. & Horvath, Z. J., Jul 1 2010, In : Physica Status Solidi (A) Applications and Materials Science. 207, 7, p. 1746-1750 5 p.

Research output: Contribution to journalArticle

14 Citations (Scopus)

Effect of the ion bombardment on the apparent barrier height in GaAs Schottky junctions

Horváth, Z. J., Mar 1 1994, In : Acta Physica Hungarica. 74, 1-2, p. 57-64 8 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)

Electrical and ellipsometry study of sputtered SiO 2 structures with embedded Ge nanocrystals

Basa, P., Alagoz, A. S., Lohner, T., Kulakci, M., Turan, R., Nagy, K. & Horváth, Z. J., Apr 15 2008, In : Applied Surface Science. 254, 12, p. 3626-3629 4 p.

Research output: Contribution to journalArticle

7 Citations (Scopus)

Electrical and low frequency noise properties of Gd and GdCo silicide contacts on n-type Si

Dózsa, L., Horváth, Z. J., Molnár, G. L., Petõ, G., Dimitriadis, C. A., Papadimitriou, L., Brini, J. & Kamarinos, G., Jul 1 2000, In : Semiconductor Science and Technology. 15, 7, p. 653-657 5 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)

Electrical and memory properties of Si 3N 4 MIS structures with embedded Si nanocrystals

Horváth, Z. J., Basa, P., Jászi, T., Pap, A. E., Dobos, L., Pécz, B., Tóth, L., Szöllosi, P. & Nagy, K., Feb 1 2008, In : Journal of Nanoscience and Nanotechnology. 8, 2, p. 812-817 6 p.

Research output: Contribution to journalArticle

16 Citations (Scopus)

Electrical and memory properties of silicon nitride structures with embedded Si nanocrystals

Basa, P., Horváth, Z. J., Jászi, T., Pap, A. E., Dobos, L., Pécz, B., Tóth, L. & Szöllosi, P., Apr 1 2007, In : Physica E: Low-Dimensional Systems and Nanostructures. 38, 1-2, p. 71-75 5 p.

Research output: Contribution to journalArticle

22 Citations (Scopus)

Electrical and photoelectrical behaviour of Au/n-CdTe junctions

Horváth, Z. J., Makhniy, V. P., Réti, I., Demych, M. V., Van Tuyen, V., Gorley, P. M., Balázs, J., Ulyanitsky, K. S., Dózsa, L., Horley, P. P. & Põdör, B., Jan 1 2001, In : Proceedings of SPIE - The International Society for Optical Engineering. 4413, p. 258-261 4 p.

Research output: Contribution to journalArticle

Electrical and photoelectrical behaviour of CdTe structures

Horváth, Z. J., Makhniy, V. P., Demych, M. V., Van Tuyen, V., Balázs, J., Réti, I., Gorley, P. M., Ulyanitsky, K. S., Horley, P. P., Stifter, D., Sitter, H. & Dózsa, L., Mar 22 2001, In : Materials Science and Engineering B: Solid-State Materials for Advanced Technology. 80, 1-3, p. 156-159 4 p.

Research output: Contribution to journalArticle

Electrical behaviour of epitaxial Al/n-Al0.25Ga0.75As junctions: effect of the composition of undoped AlxGa1 - xAs cap layer

Horváth, Z. J., Bosacchi, A., Franchi, S., Gombia, E., Mosca, R. & Biondelli, D., Jan 1 1995, In : Vacuum. 46, 8-10, p. 959-961 3 p.

Research output: Contribution to journalArticle

2 Citations (Scopus)

Electrical behaviour of ion-mixed Au/n-GaAs contacts

Horváth, Z. J., Pécz, B., Jároli, E. & Németh-Sallay, M., Mar 1 1994, In : Acta Physica Hungarica. 74, 1-2, p. 65-71 7 p.

Research output: Contribution to journalArticle

Electrical behaviour of lateral Al/n-GaN/Al structures

Horváth, Z. J., Dobos, L., Beaumont, B., Bougrioua, Z. & Pécz, B., Jul 1 2010, In : Applied Surface Science. 256, 18, p. 5614-5617 4 p.

Research output: Contribution to journalArticle

5 Citations (Scopus)

Electrical behaviour of sputtered Al/SiGe/Si structures

Horváth, Z. S. J., Serényi, M., Ádám, M., Szabó, I., Rakovics, V., Turmezei, P., Zoinai, Z. & Khan, N. Q., Dec 1 2005, In : Acta Physica Slovaca. 55, 3, p. 241-245 5 p.

Research output: Contribution to journalArticle

Electrical characterisation of Al/n-Si/p-Si Schottky junctions prepared by plasma immersion implantation

Horváth, Z. J., Ádám, M., Dücsö, C., Pintér, I., Van Tuyen, V., Bársony, I., Gombia, E., Mosca, R. & Makaró, Z. S., Mar 16 1998, In : Solid-State Electronics. 42, 2, p. 221-228 8 p.

Research output: Contribution to journalArticle

23 Citations (Scopus)

Electrical characteristics and the energy band diagram of the isotype n-Si1 -XGex/n-Si heterojunction in relaxed structures

Orlov, L. K., Horváth, Z. J., Potapov, A. V., Orlov, M. L., Ivin, S. V., Vdovin, V. I., Steinman, E. A. & Fomin, V. M., Dec 1 2004, In : Physics of the Solid State. 46, 11, p. 2139-2145 7 p.

Research output: Contribution to journalArticle

6 Citations (Scopus)

Electrical characterization of Au/SiOx/n-GaAs junctions

Ivanèo, J., Horváth, Z. J., Van Tuyen, V., Coluzza, C., Almeida, J., Terrasi, A., Pécz, B., Vincze, G. & Margaritondo, G., Mar 16 1998, In : Solid-State Electronics. 42, 2, p. 229-233 5 p.

Research output: Contribution to journalArticle

3 Citations (Scopus)

Electrical peculiarities in Al/Si/Ge/.../Ge/Si and Al/SiGe/Si structures

Horváth, Z. J., Jarrendähl, K., Ádám, M., Szabó, I., Van Tuyen, V. & Czigány, Z., May 8 2002, In : Applied Surface Science. 190, 1-4, p. 403-407 5 p.

Research output: Contribution to journalArticle

12 Citations (Scopus)

Electron spectroscopy investigations of semiconductor nanocrystals formed by various technologies

Kovalev, A. I., Wainstein, D. L., Tetelbaum, D. I., Mikhailov, A. N., Golan, Y., Lifshitz, Y., Berman, A., Basa, P. & Horváth, Z., 2008, In : International Journal of Nanoparticles. 1, 1, p. 14-31 18 p.

Research output: Contribution to journalArticle

Engineered Schottky barriers on n-In0.35Ga0.65As

Horváth, Z. J., Van Tuyen, V., Franchi, S., Bosacchi, A., Frigeri, P., Gombia, E., Mosca, R., Pal, D., Kalmár, I. & Szentpáli, B., Mar 22 2001, In : Materials Science and Engineering B: Solid-State Materials for Advanced Technology. 80, 1-3, p. 248-251 4 p.

Research output: Contribution to journalArticle

4 Citations (Scopus)
4 Citations (Scopus)

Features of electronic transport in relaxed Si/Si1-XGeX heterostructures with high doping level

Orlov, L. K., Mel'Nikova, A. A., Orlov, M. L., Alyabina, NY. A., Ivina, NY. L., Neverov, V. N. & Horváth, Z. J., Nov 18 2013, In : Animal. 1534, 1, p. A43-A48

Research output: Contribution to journalArticle

Features of electronic transport in relaxed Si/Si1-XGe X heterostructures with high doping level

Orlov, L. K., Mel'Nikova, A. A., Orlov, M. L., Alyabina, N. A., Ivina, N. L., Neverov, V. N. & Horváth, Z. J., Jun 2013, In : Physica E: Low-Dimensional Systems and Nanostructures. 51, p. 87-93 7 p.

Research output: Contribution to journalArticle

2 Citations (Scopus)

Features of electron transport in relaxed Si/Si1 - xGex transistor heterostructures with a high doping level

Orlov, M. L., Horvath, Z. J., Ivina, N. L., Neverov, V. N. & Orlov, L. K., Jul 2014, In : Semiconductors. 48, 7, p. 942-953 12 p.

Research output: Contribution to journalArticle

Formation of Ge nanocrystals in SiO 2 by electron beam evaporation

Basa, P., Molnár, G., Dobos, L., Pécz, B., Tóth, L., Tóth, A. L., Koós, A. A., Dózsa, L., Nemcsics, Á. & Horváth, Z. J., Feb 1 2008, In : Journal of Nanoscience and Nanotechnology. 8, 2, p. 818-822 5 p.

Research output: Contribution to journalArticle

16 Citations (Scopus)

GaAs Schottky varactors for linear frequency tuning in X‐band

Horváth, Z. J., Gyúbó, I., Németh‐Sallay, M., Szentpáli, B. & Kazi, K., Apr 16 1986, In : physica status solidi (a). 94, 2, p. 719-726 8 p.

Research output: Contribution to journalArticle

12 Citations (Scopus)

GaAs VPE layers for microwave Schottky tuning varactors

Gyuró, I. & Horváth, Z. J., Apr 1 1987, In : Acta Physica Hungarica. 61, 2, p. 165-168 4 p.

Research output: Contribution to journalArticle

15 Citations (Scopus)

High-power InAs/InAsSbP heterostructure leds for methane spectroscopy (λ ≈ 3.3 μm)

Astakhova, A. P., Golovin, A. S., Il'inskaya, N. D., Kalinina, K. V., Kizhayev, S. S., Serebrennikova, O. Y., Stoyanov, N. D., Horvath, Z. J. & Yakovlev, Y. P., Feb 1 2010, In : Semiconductors. 44, 2, p. 263-268 6 p.

Research output: Contribution to journalArticle

11 Citations (Scopus)

InAs quantum dots in multilayer GaAs-based heterostructures

Pashaev, E. M., Yakunin, S. N., Zaitsev, A. A., Mokerov, V. G., Fedorov, Y. V., Horvath, Z. J. & Imamov, R. M., Jan 1 2003, In : Physica Status Solidi (A) Applied Research. 195, 1 SPEC, p. 204-208 5 p.

Research output: Contribution to journalArticle

7 Citations (Scopus)