• 601 Citations
  • 15 h-Index
1986 …2019
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Research Output 1986 2019

  • 601 Citations
  • 15 h-Index
  • 59 Article
  • 16 Conference contribution
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Conference contribution
2014
1 Citation (Scopus)

EXAFS study of intermixing in GaN/AlN quantum wells

Zhuravlev, K., Alexandrov, I., Malin, T., Mansurov, V., Trubina, S., Erenburg, S., Dobos, L. & Pécz, B., Mar 9 2014, 2014 International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale, 3M-NANO 2014 - Conference Proceedings. Institute of Electrical and Electronics Engineers Inc., p. 100-103 4 p. 7057321

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Semiconductor quantum wells
Growth temperature
Photoluminescence spectroscopy
X ray absorption
Molecular beam epitaxy
2013
1 Citation (Scopus)

Structural characterization of 3C-SiC grown using methyltrichlorosilane

Bosi, M., Attolini, G., Pécz, B., Zolnai, Z., Dobos, L., Martínez, O., Jiang, L. & Taysir, S., 2013, Materials Science Forum. Vol. 740-742. p. 291-294 4 p. (Materials Science Forum; vol. 740-742).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Silanes
silanes
Growth temperature
residual stress
Residual stresses
2012

The influence of C 3H 8 and CBr 4 on structural and morphological properties of 3C-SiC layers

Attolini, G., Bosi, M., Watts, B. E., Battistig, G., Dobos, L. & Pécz, B., 2012, Materials Science Forum. Vol. 711. p. 22-26 5 p. (Materials Science Forum; vol. 711).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Silanes
Vapor phase epitaxy
Induction heating
Epitaxial growth
Phase composition
2011
1 Citation (Scopus)

Influence of CrSi2 nanocrystals on the electrical properties of Au/Si-p/CrSi2 NCs/Si(111)-n mesa-diodes

Galkin, N. G., Dózsa, L., Chusovitin, E. A., Dotsenko, S. A., Pécz, B. & Dobos, L., 2011, Physics Procedia. Vol. 11. p. 35-38 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

mesas
nanocrystals
diodes
electrical properties
caps
2010
1 Citation (Scopus)

SiC epitaxial growth on Si(100) substrates using carbon tetrabromide

Attolini, G., Bosi, M., Rossi, F., Watts, B. E., Salviati, G., Battistig, G., Dobos, L. & Pécz, B., 2010, Materials Science Forum. Trans Tech Publications Ltd, Vol. 645-648. p. 139-142 4 p. (Materials Science Forum; vol. 645-648).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Epitaxial growth
atomic force microscopy
Carbon
Vapor phase epitaxy
carbon
2009

Redistribution of CrSi2 nanocryst allites in silicon cap layers during mbe growth on Si(111) substrates

Galkin, N. G., Chusovitin, E. A., Goroshko, D. L., Dotsenko, S. A., Dózsa, L., Pécz, B. & Dobos, L., 2009, Physics, Chemistry and Application of Nanostructures - Proceedings of the International Conference, NANOMEETING 2009. p. 96-99 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Silicon
Growth
2008
2 Citations (Scopus)

Image processing in the material science or fractal behaviour on the GaAs/electrolyte interface

Nemcsics, Á., Schuszter, M., Dobos, L. & Turmezei, P., 2008, SISY 2008 - 6th International Symposium on Intelligent Systems and Informatics. 4664942

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Materials science
Fractals
Image processing
Electrolytes
Etching
2006

Peculiarities of the electrical characteristics of the pseudomorphous SiGe/Si MODFET structures with a corrugated surface

Orlov, L. K., Horváth, Z., Potapov, A. V., Ivina, N. L., Pécz, B., Tóth, L., Dobos, L., Shevtsov, V. B. & Lonchakov, A. S., 2006, Proceedings of SPIE - The International Society for Optical Engineering. Vol. 6260. 62600M

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Disintegration
High electron mobility transistors
Semiconductor quantum dots
Solid solutions
Boundary layers
2003
4 Citations (Scopus)

A novel evaluation method to determine the fractal dimension of SEM images: A study of Au/Pd/GaAs contacts during heat treatment

Schuszter, M., Bodnár, Z., Dobos, L. & Mojzes, I., 2003, Physica Status Solidi C: Conferences. 3 ed. p. 1051-1054 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Fractal dimension
fractals
heat treatment
Heat treatment
Scanning electron microscopy
3 Citations (Scopus)

Investigation of defects created by growth of InAs quantum dots in GaAs

Dózsa, L., Horváth, Z., Hubik, P., Kristofik, J., Mares, J. J., Gombia, E., Frigeri, P., Mosca, R., Franchi, S., Pécz, B. & Dobos, L., 2003, Physica Status Solidi C: Conferences. 3 ed. p. 975-980 6 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Molecular beam epitaxy
point defects
Semiconductor quantum dots
Point defects
molecular beam epitaxy
2000

Morphology and electrical behaviour of Pd2Si/p-Si junctions

Horváth, Z., Kumar, J., Dobos, L., Pécz, B., Tóth, A., Chand, S. & Karányi, J., 2000, ASDAM 2000 - Conference Proceedings: 3rd International EuroConference on Advanced Semiconductor Devices and Microsystems. Institute of Electrical and Electronics Engineers Inc., p. 261-263 3 p. 889496

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Capacitance measurement
Voltage measurement
Electric potential
1998

Fractal properties of heat treated metal-compound semiconductor structures

Kovacs, B., Dobos, L., Mojzes, I. & Schuszter, M., 1998, Proceedings of the International Semiconductor Conference, CAS. IEEE, Vol. 2. p. 649-652 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Fractals
Heat treatment
Fractal dimension
Semiconductor materials
Surface morphology

Some aspects of the thermal decomposition of InP surfaces

Riesz, F., Dobos, L., Karanyi, J., Tóth, A., Vignali, C., Pelosi, C., Rakennus, K. & Hakkarainen, T., 1998, Proceedings of SPIE - The International Society for Optical Engineering. 1 ed. SPIE, Vol. 3316. p. 352-355 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

thermal decomposition
Pyrolysis
Scanning electron microscopy
scanning electron microscopy
electron mass
1997
1 Citation (Scopus)

Fractal behaviour of in situ heat treated metal-compound semiconductor structures

Dobos, L., Mojzes, I. & Schuszter, M., 1997, Proceedings of the International Semiconductor Conference, CAS. IEEE, Vol. 1. p. 229-232 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Fractals
Semiconductor materials
Metals
Semiconductor junctions
Fractal dimension
1996
1 Citation (Scopus)

Surface pattern formation and the volatile component loss of heat treated metallisations of InP

Mojzes, I., Kovacs, B., Kun, I., Mate, L., Schuszter, M. & Dobos, L., 1996, Proceedings of the International Semiconductor Conference, CAS. Anon (ed.). IEEE, Vol. 2. p. 629-632 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Metallizing
Surface morphology
Palladium
Electron microscopes
Substrates
1986

GaAs SCHOTTKY VARACTORS FOR MICROWAVE FREQUENCY TUNING.

Horváth, Z., Gyuro, I., Nemeth-Sallay, M., Szentpali, B., Kazi, K., Dobos, L., Fogt, A. & Kolumban, T., 1986, Proceedings of the Colloquium on Microwave Communication. Berceli, T. (ed.). Elsevier, (Studies in Electrical and Electronic Engineering), p. 379-380 2 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Varactors
Microwave frequencies
Tuning
Microwaves