• 611 Citations
  • 15 h-Index
1986 …2019

Research output per year

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Research Output

  • 611 Citations
  • 15 h-Index
  • 56 Article
  • 8 Conference contribution
  • 7 Conference article
  • 4 Paper
2019

Worldwide human mitochondrial haplogroup distribution from urban sewage

Pipek, O. A., Medgyes-Horváth, A., Dobos, L., Stéger, J., Szalai-Gindl, J., Visontai, D., Kaas, R. S., Koopmans, M., Hendriksen, R. S., Aarestrup, F. M. & Csabai, I., Dec 1 2019, In : Scientific reports. 9, 1, 11624.

Research output: Contribution to journalArticle

Open Access
2018

Contact problems in GaAs-based solar cells

Ürmös, A., Farkas, Z., Dobos, L., Nagy, S. & Nemcsics, Á., Jan 1 2018, In : Acta Polytechnica Hungarica. 15, 6, p. 99-124 26 p.

Research output: Contribution to journalArticle

2014

Annealed Ti/Cr/Al contacts on n-GaN

Dobos, L., Pécz, B., Tóth, L., Horváth, Z. J., Horváth, Z. E., Tóth, A. L. & Poisson, M. A., Jan 1 2014, In : Vacuum. 100, p. 46-49 4 p.

Research output: Contribution to journalArticle

7 Citations (Scopus)

EXAFS study of intermixing in GaN/AlN quantum wells

Zhuravlev, K., Alexandrov, I., Malin, T., Mansurov, V., Trubina, S., Erenburg, S., Dobos, L. & Pecz, B., Mar 9 2014, 2014 International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale, 3M-NANO 2014 - Conference Proceedings. Kallio, P. (ed.). Institute of Electrical and Electronics Engineers Inc., p. 100-103 4 p. 7057321. (2014 International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale, 3M-NANO 2014 - Conference Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Investigation of MBE grown inverted GaAs quantum dots

Nemcsics, Á., Podör, B., Tóth, L., Balázs, J., Dobos, L., Makai, J., Csutorás, M. & Ürmös, A., Apr 15 2014, (Accepted/In press) In : Microelectronics Reliability.

Research output: Contribution to journalArticle

5 Citations (Scopus)
2013

Charging behaviour of metal-nitride-oxide-semiconductor memory structures with embedded Si or Ge nanocrystals

Horváth, Z. J., Basa, P., Molnár, K. Z., Jászi, T., Pap, A. E., Molnár, G., Dobos, L., Tóth, L. & Pécz, B., Apr 1 2013, In : Nanoscience and Nanotechnology Letters. 5, 4, p. 513-517 5 p.

Research output: Contribution to journalArticle

2 Citations (Scopus)

EXAFS study of GaN/AlN multiple quantum wells grown by ammonia MBE

Zhuravlev, K., Malin, T., Trubina, S., Erenburg, S., Dobos, L., Pecz, B., Davydov, V., Smirnov, A. & Kyutt, R., Mar 1 2013, In : Physica Status Solidi (C) Current Topics in Solid State Physics. 10, 3, p. 311-314 4 p.

Research output: Contribution to journalArticle

7 Citations (Scopus)

Formation and characterization of semiconductor Ca2Si layers prepared on p-type silicon covered by an amorphous silicon cap

Dózsa, L., Molnár, G., Zolnai, Z., Dobos, L., Pécz, B., Galkin, N. G., Dotsenko, S. A., Bezbabny, D. A. & Fomin, D. V., Apr 2013, In : Journal of Materials Science. 48, 7, p. 2872-2882 11 p.

Research output: Contribution to journalArticle

9 Citations (Scopus)

Growth, structure, optical and electrical properties of Si/2D Mg2Si/Si(111) double heterostructures and Schottky diodes on their base

Galkin, K. N., Galkin, N. G., Dózsa, L., Dotsenko, S. A., Chernev, I. M., Vavanova, S. V., Dobos, L. & Pécz, B., Dec 1 2013, In : Physica Status Solidi (C) Current Topics in Solid State Physics. 10, 12, p. 1720-1723 4 p.

Research output: Contribution to journalArticle

5 Citations (Scopus)

Structural characterization of 3C-SiC grown using methyltrichlorosilane

Bosi, M., Attolini, G., Pécz, B., Zolnai, Z., Dobos, L., Martínez, O., Jiang, L. & Taysir, S., Feb 25 2013, Silicon Carbide and Related Materials 2012, ECSCRM 2012. p. 291-294 4 p. (Materials Science Forum; vol. 740-742).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)
2012

Bilayer Cr/Au contacts on n-GaN

Dobos, L., Tóth, L., Pécz, B., Horváth, Z. J., Horváth, Z. E., Tóth, A. L., Beaumont, B. & Bougrioua, Z., Jan 27 2012, In : Vacuum. 86, 6, p. 769-772 4 p.

Research output: Contribution to journalArticle

TEM study of defects in Al xGa 1-xN layers with different polarity

Tikhonov, A. V., Malin, T. V., Zhuravlev, K. S., Dobos, L. & Pecz, B., Jan 1 2012, In : Journal of Crystal Growth. 338, 1, p. 30-34 5 p.

Research output: Contribution to journalArticle

6 Citations (Scopus)

The influence of C 3H 8 and CBr 4 on structural and morphological properties of 3C-SiC layers

Attolini, G., Bosi, M., Watts, B. E., Battistig, G., Dobos, L. & Pécz, B., Feb 15 2012, HeteroSiC and WASMPE 2011. p. 22-26 5 p. (Materials Science Forum; vol. 711).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

The microstructure of Ti/Au contacts on n-type GaN annealed in nitrogen

Dobos, L., Tóth, L., Pécz, B., Horváth, Z. E., Tóth, A. L., Beaumont, B. & Bougrioua, Z., Feb 1 2012, In : Microelectronic Engineering. 90, p. 118-120 3 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)
2011

Cross-sectional transmission electron microscopy of GaAs quantum dots fabricated by filling of droplet-etched nanoholes

Nemcsics, A., Heyn, C., Tóth, L., Dobos, L., Stemmann, A. & Hansen, W., Nov 15 2011, In : Journal of Crystal Growth. 335, 1, p. 58-61 4 p.

Research output: Contribution to journalArticle

13 Citations (Scopus)

Facetting of the self-assembled droplet epitaxial GaAs quantum dot

Nemcsics, Á., Tóth, L., Dobos, L. & Stemmann, A., May 1 2011, In : Microelectronics Reliability. 51, 5, p. 927-930 4 p.

Research output: Contribution to journalArticle

6 Citations (Scopus)

Influence of CrSi2 nanocrystals on the electrical properties of Au/Si-p/CrSi2 NCs/Si(111)-n mesa-diodes

Galkin, N. G., Dózsa, L., Chusovitin, E. A., Dotsenko, S. A., Pécz, B. & Dobos, L., Jan 1 2011, In : Physics Procedia. 11, p. 35-38 4 p.

Research output: Contribution to journalArticle

Open Access
1 Citation (Scopus)
2010

CBr4 as precursor for VPE growth of cubic silicon carbide

Watts, B. E., Bosi, M., Attolini, G., Battistig, G., Dobos, L. & Pécz, B., Jun 1 2010, In : Crystal Research and Technology. 45, 6, p. 583-588 6 p.

Research output: Contribution to journalArticle

2 Citations (Scopus)

Composition of the "gaAs" quantum dot, grown by droplet epitaxy

Nemcsics, Á., Tth, L., Dobos, L., Heyn, C., Stemmann, A., Schramm, A., Welsch, H. & Hansen, W., Oct 1 2010, In : Superlattices and Microstructures. 48, 4, p. 351-357 7 p.

Research output: Contribution to journalArticle

13 Citations (Scopus)

Electrical behaviour of lateral Al/n-GaN/Al structures

Horváth, Z. J., Dobos, L., Beaumont, B., Bougrioua, Z. & Pécz, B., Jul 1 2010, In : Applied Surface Science. 256, 18, p. 5614-5617 4 p.

Research output: Contribution to journalArticle

5 Citations (Scopus)

Ion implantation enhanced formation of 3C-SiC grains at the SiO 2/Si interface after annealing in CO gas

Pécz, B., Stoemenos, J., Voelskow, M., Skorupa, W., Dobos, L., Pongrcz, A. & Battistig, G., Jan 1 2010, In : Journal of Physics: Conference Series. 209, 012045.

Research output: Contribution to journalArticle

1 Citation (Scopus)

Migration of CrSi 2 nanocrystals through nanopipes in the silicon cap

Galkin, N. G., Dózsa, L., Chusovitin, E. A., Pécz, B. & Dobos, L., Sep 15 2010, In : Applied Surface Science. 256, 23, p. 7331-7334 4 p.

Research output: Contribution to journalArticle

8 Citations (Scopus)

SiC epitaxial growth on Si(100) substrates using carbon tetrabromide

Attolini, G., Bosi, M., Rossi, F., Watts, B. E., Salviati, G., Battistig, G., Dobos, L. & Pécz, B., Jan 1 2010, Silicon Carbide and Related Materials 2009: ICSCRM 2009. Trans Tech Publications Ltd, p. 139-142 4 p. (Materials Science Forum; vol. 645-648).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)
2009

Al and Ti/Al contacts on n-GaN

Dobos, L., Pécz, B., Tóth, L., Horváth, Z. J., Horváth, Z. E., Horváth, E., Tóth, A., Beaumont, B. & Bougrioua, Z., Aug 25 2009, In : Vacuum. 84, 1, p. 228-230 3 p.

Research output: Contribution to journalArticle

6 Citations (Scopus)

Epitaxial 3C-SiC nanocrystal formation at the SiO2/Si interface by combined carbon implantation and annealing in CO atmosphere

Ṕcz, B., Stoemenos, J., Voelskow, M., Skorupa, W., Dobos, L., Pongrácz, A. & Battistig, G., May 8 2009, In : Journal of Applied Physics. 105, 8, 083508.

Research output: Contribution to journalArticle

Investigation of electrochemically etched GaAs (001) surface with the help of image processing

Nemcsics, Á., Schuszter, M., Dobos, L. & Turmezei, P., Dec 1 2009, In : Acta Polytechnica Hungarica. 6, 1, p. 95-102 8 p.

Research output: Contribution to journalArticle

3 Citations (Scopus)

Redistribution of CrSi2 nanocryst allites in silicon cap layers during mbe growth on Si(111) substrates

Galkin, N. G., Chusovitin, E. A., Goroshko, D. L., Dotsenko, S. A., Dozsa, L., Pecz, B. & Dobos, L., 2009, Physics, Chemistry and Application of Nanostructures - Proceedings of the International Conference, NANOMEETING 2009. World Scientific Publishing Co. Pte Ltd, p. 96-99 4 p. (Physics, Chemistry and Application of Nanostructures - Proceedings of the International Conference, NANOMEETING 2009).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2008

Anomalous electrical properties of Si/Si1 - X Ge x heterostructures with an electron transport channel in Si layers

Orlov, L. K., Horvath, Z. J., Orlov, M. L., Lonchakov, A. T., Ivina, N. L. & Dobos, L., Feb 2008, In : Physics of the Solid State. 50, 2, p. 330-340 11 p.

Research output: Contribution to journalArticle

4 Citations (Scopus)

Electrical and memory properties of Si 3N 4 MIS structures with embedded Si nanocrystals

Horváth, Z. J., Basa, P., Jászi, T., Pap, A. E., Dobos, L., Pécz, B., Tóth, L., Szöllosi, P. & Nagy, K., Feb 1 2008, In : Journal of Nanoscience and Nanotechnology. 8, 2, p. 812-817 6 p.

Research output: Contribution to journalArticle

16 Citations (Scopus)

Formation of Ge nanocrystals in SiO 2 by electron beam evaporation

Basa, P., Molnár, G., Dobos, L., Pécz, B., Tóth, L., Tóth, A. L., Koós, A. A., Dózsa, L., Nemcsics, Á. & Horváth, Z. J., Feb 1 2008, In : Journal of Nanoscience and Nanotechnology. 8, 2, p. 818-822 5 p.

Research output: Contribution to journalArticle

16 Citations (Scopus)

Image processing in the material science or fractal behaviour on the GaAs/electrolyte interface

Nemcsics, Á., Schuszter, M., Dobos, L. & Turmezei, P., Dec 1 2008.

Research output: Contribution to conferencePaper

2 Citations (Scopus)

Structural and electrical properties of Au and Ti/Au contacts to n-type GaN

Dobos, L., Pécz, B., Tóth, L., Horváth, Z. J., Horváth, Z. E., Beaumont, B. & Bougrioua, Z., Apr 14 2008, In : Vacuum. 82, 8, p. 794-798 5 p.

Research output: Contribution to journalArticle

19 Citations (Scopus)
2007

AlN growth on sapphire substrate by ammonia MBE

Mansurov, V. G., Nikitin, A. Y., Galitsyn, Y. G., Svitasheva, S. N., Zhuravlev, K. S., Osvath, Z., Dobos, L., Horvath, Z. E. & Pecz, B., Mar 1 2007, In : Journal of Crystal Growth. 300, 1, p. 145-150 6 p.

Research output: Contribution to journalArticle

24 Citations (Scopus)

Analysis of morphology changes of heat treated metallization of compound semiconductors by the fast wavelet-transform based on B-Spline

Schusztera, M., Dobos, L., Demcu, K. A., Nagy, S. Z. & Mojzes, I., Jul 1 2007, In : Journal of Optoelectronics and Advanced Materials. 9, 7, p. 2241-2244 4 p.

Research output: Contribution to journalArticle

1 Citation (Scopus)

A novel evaluating method to determine fractal dimension of SEM images: A study of heat treated Au/Pd/GaAs contacts

Schuszter, M., Dobos, L. & Mojzes, I., Sep 1 2007, In : Journal of Optoelectronics and Advanced Materials. 9, 9, p. 2853-2856 4 p.

Research output: Contribution to journalArticle

Continuous order-disorder phase transition (2×2)→(1×1) on the (0001)AlN surface

Mansurov, V. G., Galitsyn, Y. G., Nikitin, A. Y., Kolosovsky, E. A., Zhuravlev, K. S., Osvath, Z., Dobos, L., Horvath, Z. E. & Pecz, B., Dec 1 2007, In : Physica Status Solidi (C) Current Topics in Solid State Physics. 4, 7, p. 2498-2501 4 p.

Research output: Contribution to journalConference article

1 Citation (Scopus)

Electrical and memory properties of silicon nitride structures with embedded Si nanocrystals

Basa, P., Horváth, Z. J., Jászi, T., Pap, A. E., Dobos, L., Pécz, B., Tóth, L. & Szöllosi, P., Apr 1 2007, In : Physica E: Low-Dimensional Systems and Nanostructures. 38, 1-2, p. 71-75 5 p.

Research output: Contribution to journalArticle

22 Citations (Scopus)

Heat treatment parameters effecting the fractal dimensions of AuGe metallization on GaAs

Mojzes, I., Dominkovics, C., Harsányi, G., Nagy, S., Pipek, J. & Dobos, L., Aug 24 2007, In : Applied Physics Letters. 91, 7, 073107.

Research output: Contribution to journalArticle

11 Citations (Scopus)

Properties of CrSi2 nanocrystallites grown in a silicon matrix

Galkin, N. G., Dózsa, L., Turchin, T. V., Goroshko, D. L., Pécz, B., Tóth, L., Dobos, L., Khanh, N. Q. & Cherednichenko, A. I., Dec 19 2007, In : Journal of Physics Condensed Matter. 19, 50, 506204.

Research output: Contribution to journalArticle

20 Citations (Scopus)
19 Citations (Scopus)
2006
10 Citations (Scopus)

Electrical and optical properties of Si-rich SiNx layers: Effect of annealing

Szöllosi, P., Basa, P., Dücso, C., Máté, B., Ádám, M., Lohner, T., Petrik, P., Pécz, B., Tóth, L., Dobos, L., Dózsa, L. & Horváth, Z. J., Feb 1 2006, In : Current Applied Physics. 6, 2, p. 179-181 3 p.

Research output: Contribution to journalConference article

2 Citations (Scopus)

Fractal character of in situ heat treated metal-compound semiconductor contacts

Dávid, L., Dobos, L., Kovács, B., Mojzes, I. & Pécz, B., Apr 1 2006, In : Journal of Materials Science: Materials in Electronics. 17, 4, p. 321-324 4 p.

Research output: Contribution to journalArticle

7 Citations (Scopus)

Metal contacts to n-GaN

Dobos, L., Pécz, B., Tóth, L., Horváth, Z. J., Horváth, Z. E., Tóth, A., Horváth, E., Beaumont, B. & Bougrioua, Z., Nov 15 2006, In : Applied Surface Science. 253, 2, p. 655-661 7 p.

Research output: Contribution to journalArticle

19 Citations (Scopus)

Optical and structural studies of high-quality bulk-like GaN grown by HVPE on a MOVPE AlN buffer layer

Gogova, D., Siche, D., Fornari, R., Monemar, B., Gibart, P., Dobos, L., Pécz, B., Tuomisto, F., Bayazitov, R. & Zollo, G., May 1 2006, In : Semiconductor Science and Technology. 21, 5, p. 702-708 7 p.

Research output: Contribution to journalArticle

18 Citations (Scopus)

Peculiarities of the electrical characteristics of the pseudomorphous SiGe/Si MODFET structures with a corrugated surface

Orlov, L. K., Horvath, Z., Potapov, A. V., Ivina, N. L., Pecz, B., Toth, L., Dobos, L., Shevtsov, V. B. & Lonchakov, A. S., Jul 26 2006, Micro- and Nanoelectronics 2005. 62600M. (Proceedings of SPIE - The International Society for Optical Engineering; vol. 6260).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2005

Crystallization of amorphous-Si films by flash lamp annealing

Pécz, B., Dobos, L., Panknin, D., Skorupa, W., Lioutas, C. & Vouroutzis, N., Mar 31 2005, In : Applied Surface Science. 242, 1-2, p. 185-191 7 p.

Research output: Contribution to journalArticle

76 Citations (Scopus)
2004

Strain-free bulk-like GaN grown by hydride-vapor-phase-epitaxy on two-step epitaxial lateral overgrown GaN template

Gogova, D., Kasic, A., Larsson, H., Hemmingsson, C., Monemar, B., Tuomisto, F., Saarinen, K., Dobos, L., Pécz, B., Gibart, P. & Beaumont, B., Jul 1 2004, In : Journal of Applied Physics. 96, 1, p. 799-806 8 p.

Research output: Contribution to journalArticle

53 Citations (Scopus)

TEM study of GaAs implanted with high dose nitrogen ions

Pécz, B., Tóth, L., Dobos, L., Szuts, T., Heera, V., Skorupa, W. & Dekorsy, T., Nov 17 2004, In : Design and Nature. 6, p. 441-444 4 p.

Research output: Contribution to journalConference article

1 Citation (Scopus)
2003

A novel evaluation method to determine the fractal dimension of SEM images: A study of Au/Pd/GaAs contacts during heat treatment

Schuszter, M., Bodnár, Z., Dobos, L. & Mojzes, I., Dec 1 2003, In : Physica Status Solidi C: Conferences. 3, p. 1051-1054 4 p.

Research output: Contribution to journalConference article

4 Citations (Scopus)