• 601 Citations
  • 15 h-Index
1986 …2019
If you made any changes in Pure these will be visible here soon.

Research Output 1986 2019

  • 601 Citations
  • 15 h-Index
  • 59 Article
  • 16 Conference contribution
2019

Worldwide human mitochondrial haplogroup distribution from urban sewage

Pipek, O. A., Medgyes-Horváth, A., Dobos, L., Stéger, J., Szalai-Gindl, J., Visontai, D., Kaas, R. S., Koopmans, M., Hendriksen, R. S., Aarestrup, F. M. & Csabai, I., Dec 1 2019, In : Scientific reports. 9, 1, 11624.

Research output: Contribution to journalArticle

Open Access
mitochondrial DNA
sewage
census
genotype
distribution
2018

Contact problems in GaAs-based solar cells

Ürmös, A., Farkas, Z., Dobos, L., Nagy, S. & Nemcsics, Á., Jan 1 2018, In : Acta Polytechnica Hungarica. 15, 6, p. 99-124 26 p.

Research output: Contribution to journalArticle

Solar cells
Ohmic contacts
Metallizing
Electronic properties
Annealing
2014
7 Citations (Scopus)

Annealed Ti/Cr/Al contacts on n-GaN

Dobos, L., Pécz, B., Tóth, L., Horváth, Z., Horváth, Z., Tóth, A. & Poisson, M. A., 2014, In : Vacuum. 100, p. 46-49 4 p.

Research output: Contribution to journalArticle

electron microscopy
X ray diffraction
High resolution electron microscopy
Epitaxial layers
diffraction
1 Citation (Scopus)

EXAFS study of intermixing in GaN/AlN quantum wells

Zhuravlev, K., Alexandrov, I., Malin, T., Mansurov, V., Trubina, S., Erenburg, S., Dobos, L. & Pécz, B., Mar 9 2014, 2014 International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale, 3M-NANO 2014 - Conference Proceedings. Institute of Electrical and Electronics Engineers Inc., p. 100-103 4 p. 7057321

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Semiconductor quantum wells
Growth temperature
Photoluminescence spectroscopy
X ray absorption
Molecular beam epitaxy
5 Citations (Scopus)

Investigation of MBE grown inverted GaAs quantum dots

Nemcsics, Á., Podör, B., Tóth, L., Balázs, J., Dobos, L., Makai, J., Csutorás, M. & Ürmös, A., Apr 15 2014, (Accepted/In press) In : Microelectronics Reliability.

Research output: Contribution to journalArticle

Molecular beam epitaxy
Semiconductor quantum dots
quantum dots
photoluminescence
Photoluminescence spectroscopy
2013
2 Citations (Scopus)

Charging behaviour of metal-nitride-oxide-semiconductor memory structures with embedded Si or Ge nanocrystals

Horváth, Z., Basa, P., Molnár, K. Z., Jászi, T., Pap, A., Molnár, G., Dobos, L., Tóth, L. & Pécz, B., Apr 2013, In : Nanoscience and Nanotechnology Letters. 5, 4, p. 513-517 5 p.

Research output: Contribution to journalArticle

Nitrides
Nanocrystals
Metals
Oxides
Data storage equipment
4 Citations (Scopus)

EXAFS study of GaN/AlN multiple quantum wells grown by ammonia MBE

Zhuravlev, K., Malin, T., Trubina, S., Erenburg, S., Dobos, L., Pécz, B., Davydov, V., Smirnov, A. & Kyutt, R., Mar 2013, In : Physica Status Solidi (C) Current Topics in Solid State Physics. 10, 3, p. 311-314 4 p.

Research output: Contribution to journalArticle

ammonia
quantum wells
x rays
molecular beam epitaxy
Raman spectroscopy
7 Citations (Scopus)

Formation and characterization of semiconductor Ca2Si layers prepared on p-type silicon covered by an amorphous silicon cap

Dózsa, L., Molnár, G., Zolnai, Z., Dobos, L., Pécz, B., Galkin, N. G., Dotsenko, S. A., Bezbabny, D. A. & Fomin, D. V., Apr 2013, In : Journal of Materials Science. 48, 7, p. 2872-2882 11 p.

Research output: Contribution to journalArticle

Silicon
Amorphous silicon
Semiconductor materials
Defects
Electron energy loss spectroscopy
5 Citations (Scopus)

Growth, structure, optical and electrical properties of Si/2D Mg2Si/Si(111) double heterostructures and Schottky diodes on their base

Galkin, K. N., Galkin, N. G., Dózsa, L., Dotsenko, S. A., Chernev, I. M., Vavanova, S. V., Dobos, L. & Pécz, B., Dec 2013, In : Physica Status Solidi (C) Current Topics in Solid State Physics. 10, 12, p. 1720-1723 4 p.

Research output: Contribution to journalArticle

Schottky diodes
diodes
electrical properties
caps
optical properties
1 Citation (Scopus)

Structural characterization of 3C-SiC grown using methyltrichlorosilane

Bosi, M., Attolini, G., Pécz, B., Zolnai, Z., Dobos, L., Martínez, O., Jiang, L. & Taysir, S., 2013, Materials Science Forum. Vol. 740-742. p. 291-294 4 p. (Materials Science Forum; vol. 740-742).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Silanes
silanes
Growth temperature
residual stress
Residual stresses
2012

Bilayer Cr/Au contacts on n-GaN

Dobos, L., Tóth, L., Pécz, B., Horváth, Z., Horváth, Z., Tóth, A., Beaumont, B. & Bougrioua, Z., Jan 27 2012, In : Vacuum. 86, 6, p. 769-772 4 p.

Research output: Contribution to journalArticle

electric contacts
Vacuum
vacuum
Metals
Annealing
6 Citations (Scopus)

TEM study of defects in Al xGa 1-xN layers with different polarity

Tikhonov, A. V., Malin, T. V., Zhuravlev, K. S., Dobos, L. & Pécz, B., Jan 1 2012, In : Journal of Crystal Growth. 338, 1, p. 30-34 5 p.

Research output: Contribution to journalArticle

polarity
Transmission electron microscopy
Defects
transmission electron microscopy
defects

The influence of C 3H 8 and CBr 4 on structural and morphological properties of 3C-SiC layers

Attolini, G., Bosi, M., Watts, B. E., Battistig, G., Dobos, L. & Pécz, B., 2012, Materials Science Forum. Vol. 711. p. 22-26 5 p. (Materials Science Forum; vol. 711).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Silanes
Vapor phase epitaxy
Induction heating
Epitaxial growth
Phase composition
1 Citation (Scopus)

The microstructure of Ti/Au contacts on n-type GaN annealed in nitrogen

Dobos, L., Tóth, L., Pécz, B., Horváth, Z., Tóth, A., Beaumont, B. & Bougrioua, Z., Feb 2012, In : Microelectronic Engineering. 90, p. 118-120 3 p.

Research output: Contribution to journalArticle

Aluminum Oxide
Sapphire
electric contacts
Nitrogen
nitrogen
2011
13 Citations (Scopus)

Cross-sectional transmission electron microscopy of GaAs quantum dots fabricated by filling of droplet-etched nanoholes

Nemcsics, A., Heyn, C., Tóth, L., Dobos, L., Stemmann, A. & Hansen, W., Nov 15 2011, In : Journal of Crystal Growth. 335, 1, p. 58-61 4 p.

Research output: Contribution to journalArticle

Semiconductor quantum dots
quantum dots
Transmission electron microscopy
transmission electron microscopy
etchants
6 Citations (Scopus)

Facetting of the self-assembled droplet epitaxial GaAs quantum dot

Nemcsics, Á., Tóth, L., Dobos, L. & Stemmann, A., May 2011, In : Microelectronics Reliability. 51, 5, p. 927-930 4 p.

Research output: Contribution to journalArticle

Semiconductor quantum dots
quantum dots
Reflection high energy electron diffraction
Transmission electron microscopy
transmission electron microscopy
1 Citation (Scopus)

Influence of CrSi2 nanocrystals on the electrical properties of Au/Si-p/CrSi2 NCs/Si(111)-n mesa-diodes

Galkin, N. G., Dózsa, L., Chusovitin, E. A., Dotsenko, S. A., Pécz, B. & Dobos, L., 2011, Physics Procedia. Vol. 11. p. 35-38 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

mesas
nanocrystals
diodes
electrical properties
caps
2010
2 Citations (Scopus)

CBr4 as precursor for VPE growth of cubic silicon carbide

Watts, B. E., Bosi, M., Attolini, G., Battistig, G., Dobos, L. & Pécz, B., Jun 2010, In : Crystal Research and Technology. 45, 6, p. 583-588 6 p.

Research output: Contribution to journalArticle

Vapor phase epitaxy
Silicon carbide
silicon carbides
atomic force microscopy
epitaxy
13 Citations (Scopus)

Composition of the "gaAs" quantum dot, grown by droplet epitaxy

Nemcsics, Á., Tóth, L., Dobos, L., Heyn, C., Stemmann, A., Schramm, A., Welsch, H. & Hansen, W., Oct 2010, In : Superlattices and Microstructures. 48, 4, p. 351-357 7 p.

Research output: Contribution to journalArticle

Epitaxial growth
epitaxy
Semiconductor quantum dots
quantum dots
Transmission electron microscopy
5 Citations (Scopus)

Electrical behaviour of lateral Al/n-GaN/Al structures

Horváth, Z., Dobos, L., Beaumont, B., Bougrioua, Z. & Pécz, B., Jul 1 2010, In : Applied Surface Science. 256, 18, p. 5614-5617 4 p.

Research output: Contribution to journalArticle

Voltage measurement
Electric current measurement
Liquid nitrogen
Contact resistance
Electric space charge
1 Citation (Scopus)

Ion implantation enhanced formation of 3C-SiC grains at the SiO 2/Si interface after annealing in CO gas

Pécz, B., Stoemenos, J., Voelskow, M., Skorupa, W., Dobos, L., Pongrcz, A. & Battistig, G., 2010, In : Journal of Physics: Conference Series. 209, 012045.

Research output: Contribution to journalArticle

ion implantation
flat surfaces
nucleation
annealing
carbon
8 Citations (Scopus)

Migration of CrSi2 nanocrystals through nanopipes in the silicon cap

Galkin, N. G., Dózsa, L., Chusovitin, E. A., Pécz, B. & Dobos, L., Sep 15 2010, In : Applied Surface Science. 256, 23, p. 7331-7334 4 p.

Research output: Contribution to journalArticle

Silicon
Nanocrystals
Growth temperature
Deposition rates
Epitaxial growth
1 Citation (Scopus)

SiC epitaxial growth on Si(100) substrates using carbon tetrabromide

Attolini, G., Bosi, M., Rossi, F., Watts, B. E., Salviati, G., Battistig, G., Dobos, L. & Pécz, B., 2010, Materials Science Forum. Trans Tech Publications Ltd, Vol. 645-648. p. 139-142 4 p. (Materials Science Forum; vol. 645-648).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Epitaxial growth
atomic force microscopy
Carbon
Vapor phase epitaxy
carbon
2009
5 Citations (Scopus)

Al and Ti/Al contacts on n-GaN

Dobos, L., Pécz, B., Tóth, L., Horváth, Z., Horváth, Z., Horváth, E., Tóth, A., Beaumont, B. & Bougrioua, Z., Aug 25 2009, In : Vacuum. 84, 1, p. 228-230 3 p.

Research output: Contribution to journalArticle

Phase interfaces
Metals
Annealing
Organic Chemicals
X ray diffraction

Epitaxial 3C-SiC nanocrystal formation at the SiO2/Si interface by combined carbon implantation and annealing in CO atmosphere

Pécz, B., Stoemenos, J., Voelskow, M., Skorupa, W., Dobos, L., Pongrácz, A. & Battistig, G., 2009, In : Journal of Applied Physics. 105, 8, 083508.

Research output: Contribution to journalArticle

implantation
nanocrystals
nucleation
atmospheres
annealing
3 Citations (Scopus)

Investigation of electrochemically etched GaAs (001) surface with the help of image processing

Nemcsics, Á., Schuszter, M., Dobos, L. & Turmezei, P., 2009, In : Acta Polytechnica Hungarica. 6, 1, p. 95-102 8 p.

Research output: Contribution to journalArticle

Image processing
Fractals
Surface morphology
Etching
Electron microscopes

Redistribution of CrSi2 nanocryst allites in silicon cap layers during mbe growth on Si(111) substrates

Galkin, N. G., Chusovitin, E. A., Goroshko, D. L., Dotsenko, S. A., Dózsa, L., Pécz, B. & Dobos, L., 2009, Physics, Chemistry and Application of Nanostructures - Proceedings of the International Conference, NANOMEETING 2009. p. 96-99 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Silicon
Growth
2008
4 Citations (Scopus)

Anomalous electrical properties of Si/Si1 - X Ge x heterostructures with an electron transport channel in Si layers

Orlov, L. K., Horváth, Z., Orlov, M. L., Lonchakov, A. T., Ivina, N. L. & Dobos, L., Feb 2008, In : Physics of the Solid State. 50, 2, p. 330-340 11 p.

Research output: Contribution to journalArticle

Magnetoresistance
Heterojunctions
Electric properties
electrical properties
Magnetic fields
16 Citations (Scopus)

Electrical and memory properties of Si 3N 4 MIS structures with embedded Si nanocrystals

Horváth, Z., Basa, P., Jászi, T., Pap, A., Dobos, L., Pécz, B., Tóth, L., Szöllosi, P. & Nagy, K., Feb 2008, In : Journal of Nanoscience and Nanotechnology. 8, 2, p. 812-817 6 p.

Research output: Contribution to journalArticle

Management information systems
Nanoparticles
Nanocrystals
Data storage equipment
Vapor Pressure
16 Citations (Scopus)

Formation of Ge nanocrystals in SiO 2 by electron beam evaporation

Basa, P., Molnár, G., Dobos, L., Pécz, B., Tóth, L., Tóth, A., Koós, A. A., Dózsa, L., Nemcsics, Á. & Horváth, Z., Feb 2008, In : Journal of Nanoscience and Nanotechnology. 8, 2, p. 818-822 5 p.

Research output: Contribution to journalArticle

Nanoparticles
Nanocrystals
Electron beams
Evaporation
Electrons
2 Citations (Scopus)

Image processing in the material science or fractal behaviour on the GaAs/electrolyte interface

Nemcsics, Á., Schuszter, M., Dobos, L. & Turmezei, P., 2008, SISY 2008 - 6th International Symposium on Intelligent Systems and Informatics. 4664942

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Materials science
Fractals
Image processing
Electrolytes
Etching
19 Citations (Scopus)

Structural and electrical properties of Au and Ti/Au contacts to n-type GaN

Dobos, L., Pécz, B., Tóth, L., Horváth, Z., Horváth, Z., Beaumont, B. & Bougrioua, Z., Apr 14 2008, In : Vacuum. 82, 8, p. 794-798 5 p.

Research output: Contribution to journalArticle

Epilayers
Voltage measurement
Electric current measurement
Gold
Structural properties
2007
24 Citations (Scopus)

AlN growth on sapphire substrate by ammonia MBE

Mansurov, V. G., Nikitin, A. Y., Galitsyn, Y. G., Svitasheva, S. N., Zhuravlev, K. S., Osváth, Z., Dobos, L., Horváth, Z. & Pécz, B., Mar 1 2007, In : Journal of Crystal Growth. 300, 1, p. 145-150 6 p.

Research output: Contribution to journalArticle

Aluminum Oxide
Ammonia
Molecular beam epitaxy
Sapphire
ammonia
1 Citation (Scopus)

Analysis of morphology changes of heat treated metallization of compound semiconductors by the fast wavelet-transform based on B-Spline

Schusztera, M., Dobos, L., Demcu, K. A., Nagy, S. Z. & Mojzes, I., Jul 2007, In : Journal of Optoelectronics and Advanced Materials. 9, 7, p. 2241-2244 4 p.

Research output: Contribution to journalArticle

splines
Metallizing
wavelet analysis
Splines
Wavelet transforms

A novel evaluating method to determine fractal dimension of SEM images: A study of heat treated Au/Pd/GaAs contacts

Schuszter, M., Dobos, L. & Mojzes, I., Sep 2007, In : Journal of Optoelectronics and Advanced Materials. 9, 9, p. 2853-2856 4 p.

Research output: Contribution to journalArticle

Arsenic
Fractal dimension
fractals
Heat treatment
heat

Continuous order-disorder phase transition (2×2)→(1×1) on the (0001)AlN surface

Mansurov, V. G., Galitsyn, Y. G., Nikitin, A. Y., Kolosovsky, E. A., Zhuravlev, K. S., Osváth, Z., Dobos, L., Horváth, Z. & Pécz, B., 2007, In : Physica Status Solidi (C) Current Topics in Solid State Physics. 4, 7, p. 2498-2501 4 p.

Research output: Contribution to journalArticle

ammonia
disorders
sapphire
molecular beam epitaxy
activation energy
22 Citations (Scopus)

Electrical and memory properties of silicon nitride structures with embedded Si nanocrystals

Basa, P., Horváth, Z., Jászi, T., Pap, A., Dobos, L., Pécz, B., Tóth, L. & Szöllosi, P., Apr 2007, In : Physica E: Low-Dimensional Systems and Nanostructures. 38, 1-2, p. 71-75 5 p.

Research output: Contribution to journalArticle

Silicon nitride
silicon nitrides
Nanocrystals
nanocrystals
electrical properties
11 Citations (Scopus)

Heat treatment parameters effecting the fractal dimensions of AuGe metallization on GaAs

Mojzes, I., Dominkovics, C., Harsányi, G., Nagy, S., Pipek, J. & Dobos, L., 2007, In : Applied Physics Letters. 91, 7, 073107.

Research output: Contribution to journalArticle

fractals
heat treatment
20 Citations (Scopus)

Properties of CrSi2 nanocrystallites grown in a silicon matrix

Galkin, N. G., Dózsa, L., Turchin, T. V., Goroshko, D. L., Pécz, B., Tóth, L., Dobos, L., Khanh, N. Q. & Cherednichenko, A. I., Dec 19 2007, In : Journal of Physics Condensed Matter. 19, 50, 506204.

Research output: Contribution to journalArticle

Nanocrystallites
Silicon
Ultraviolet photoelectron spectroscopy
transmission electron microscopy
Deep level transient spectroscopy
19 Citations (Scopus)
Semiconductor device models
Silicon nitride
silicon nitrides
Nanocrystals
nanocrystals
2006
10 Citations (Scopus)
ellipsometry
backscattering
disorders
damage
transmission electron microscopy
2 Citations (Scopus)

Electrical and optical properties of Si-rich SiNx layers: Effect of annealing

Szöllosi, P., Basa, P., Dücső, C., Máté, B., Ádám, M., Lohner, T., Petrik, P., Pécz, B., Tóth, L., Dobos, L., Dózsa, L. & Horváth, Z., Feb 2006, In : Current Applied Physics. 6, 2, p. 179-181 3 p.

Research output: Contribution to journalArticle

Electric properties
Optical properties
electrical properties
Annealing
optical properties
7 Citations (Scopus)

Fractal character of in situ heat treated metal-compound semiconductor contacts

Dávid, L., Dobos, L., Kovács, B., Mojzes, I. & Pécz, B., Apr 2006, In : Journal of Materials Science: Materials in Electronics. 17, 4, p. 321-324 4 p.

Research output: Contribution to journalArticle

Fractals
Semiconductors
metal compounds
fractals
Hot Temperature
18 Citations (Scopus)

Metal contacts to n-GaN

Dobos, L., Pécz, B., Tóth, L., Horváth, Z., Horváth, Z., Tóth, A., Horváth, E., Beaumont, B. & Bougrioua, Z., Nov 15 2006, In : Applied Surface Science. 253, 2, p. 655-661 7 p.

Research output: Contribution to journalArticle

Phase interfaces
electric contacts
Metals
X ray diffraction
metals
18 Citations (Scopus)

Optical and structural studies of high-quality bulk-like GaN grown by HVPE on a MOVPE AlN buffer layer

Gogova, D., Siche, D., Fornari, R., Monemar, B., Gibart, P., Dobos, L., Pécz, B., Tuomisto, F., Bayazitov, R. & Zollo, G., May 1 2006, In : Semiconductor Science and Technology. 21, 5, p. 702-708 7 p.

Research output: Contribution to journalArticle

Metallorganic vapor phase epitaxy
Vapor phase epitaxy
Buffer layers
Hydrides
vapor phase epitaxy

Peculiarities of the electrical characteristics of the pseudomorphous SiGe/Si MODFET structures with a corrugated surface

Orlov, L. K., Horváth, Z., Potapov, A. V., Ivina, N. L., Pécz, B., Tóth, L., Dobos, L., Shevtsov, V. B. & Lonchakov, A. S., 2006, Proceedings of SPIE - The International Society for Optical Engineering. Vol. 6260. 62600M

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Disintegration
High electron mobility transistors
Semiconductor quantum dots
Solid solutions
Boundary layers
2005
76 Citations (Scopus)

Crystallization of amorphous-Si films by flash lamp annealing

Pécz, B., Dobos, L., Panknin, D., Skorupa, W., Lioutas, C. & Vouroutzis, N., Mar 31 2005, In : Applied Surface Science. 242, 1-2, p. 185-191 7 p.

Research output: Contribution to journalArticle

flash lamps
Crystallization
Electric lamps
Annealing
crystallization
2004
52 Citations (Scopus)

Strain-free bulk-like GaN grown by hydride-vapor-phase-epitaxy on two-step epitaxial lateral overgrown GaN template

Gogova, D., Kasic, A., Larsson, H., Hemmingsson, C., Monemar, B., Tuomisto, F., Saarinen, K., Dobos, L., Pécz, B., Gibart, P. & Beaumont, B., Jul 1 2004, In : Journal of Applied Physics. 96, 1, p. 799-806 8 p.

Research output: Contribution to journalArticle

vapor phase epitaxy
hydrides
templates
sapphire
nitrides
1 Citation (Scopus)

TEM study of GaAs implanted with high dose nitrogen ions

Pécz, B., Tóth, L., Dobos, L., Szuts, T., Heera, V., Skorupa, W. & Dekorsy, T., 2004, In : Design and Nature. 6, p. 441-444 4 p.

Research output: Contribution to journalArticle

Precipitates
Transmission electron microscopy
Nitrogen
Stacking faults
Ions
2003
4 Citations (Scopus)

A novel evaluation method to determine the fractal dimension of SEM images: A study of Au/Pd/GaAs contacts during heat treatment

Schuszter, M., Bodnár, Z., Dobos, L. & Mojzes, I., 2003, Physica Status Solidi C: Conferences. 3 ed. p. 1051-1054 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Fractal dimension
fractals
heat treatment
Heat treatment
Scanning electron microscopy