• 2859 Citations
  • 28 h-Index
1986 …2020

Research output per year

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Research Output

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Conference article
2017

Mg2SixSn1-xheterostructures on Si(111) substrate for optoelectronics and thermoelectronics

Galkin, N. G., Galkin, K. N., Dotsenko, S. A., Chernov, I. M., Maslov, A. M., Dózsa, L., Pécz, B., Oszáth, Z., Cora, I., Migas, D. B., Kudrawiec, R. & Misiewicz, J., Jan 1 2017, In : Proceedings of SPIE - The International Society for Optical Engineering. 10176, 1017604.

Research output: Contribution to journalConference article

2013

ZnO layers deposited by atomic layer deposition

Pécz, B., Baji, Z., Lábadi, Z. & Kovács, A., Jan 1 2013, In : Journal of Physics: Conference Series. 471, 1, 012015.

Research output: Contribution to journalConference article

3 Citations (Scopus)
2011

Microscopy of nitride layers grown on diamond

Pécz, B., Tóth, L., Barna, Á., Tsiakatouras, G., Ajagunna, A. O., Kovács, A. & Georgakilas, A., Jan 1 2011, In : Journal of Physics: Conference Series. 326, 1, 012010.

Research output: Contribution to journalConference article

1 Citation (Scopus)
2010

Thermal oxidation of lattice matched InAlN/GaN heterostructures

Alomari, M., Chuvilin, A., Toth, L., Pecz, B., Carlin, J. F., Grandjean, N., Gaquière, C., Di Forte-Poisson, M. A., Delage, S. & Kohn, E., Mar 26 2010, In : Physica Status Solidi (C) Current Topics in Solid State Physics. 7, 1, p. 13-16 4 p.

Research output: Contribution to journalConference article

12 Citations (Scopus)
2007

Continuous order-disorder phase transition (2×2)→(1×1) on the (0001)AlN surface

Mansurov, V. G., Galitsyn, Y. G., Nikitin, A. Y., Kolosovsky, E. A., Zhuravlev, K. S., Osvath, Z., Dobos, L., Horvath, Z. E. & Pecz, B., Dec 1 2007, In : Physica Status Solidi (C) Current Topics in Solid State Physics. 4, 7, p. 2498-2501 4 p.

Research output: Contribution to journalConference article

2006

Electrical and optical properties of Si-rich SiNx layers: Effect of annealing

Szöllosi, P., Basa, P., Dücso, C., Máté, B., Ádám, M., Lohner, T., Petrik, P., Pécz, B., Tóth, L., Dobos, L., Dózsa, L. & Horváth, Z. J., Feb 1 2006, In : Current Applied Physics. 6, 2, p. 179-181 3 p.

Research output: Contribution to journalConference article

2 Citations (Scopus)
2004

Characterization of high-quality free-standing GaN grown by HVPE

Gogova, D., Kasic, A., Larsson, H., Pécz, B., Yakimova, R., Ivanov, I. G. & Monemar, B., Dec 1 2004, In : Physica Scripta T. T114, p. 18-21 4 p.

Research output: Contribution to journalConference article

4 Citations (Scopus)

TEM characterization of epitaxial 3C-SiC grains on Si (100) and Si (111)

Makkai, Z., Pécz, B., Vida, G. & Deák, P., Nov 17 2004, In : Design and Nature. 6, p. 265-268 4 p.

Research output: Contribution to journalConference article

TEM study of GaAs implanted with high dose nitrogen ions

Pécz, B., Tóth, L., Dobos, L., Szuts, T., Heera, V., Skorupa, W. & Dekorsy, T., Nov 17 2004, In : Design and Nature. 6, p. 441-444 4 p.

Research output: Contribution to journalConference article

1 Citation (Scopus)
2003

Investigation of defects created by growth of InAs quantum dots in GaAs

Dózsa, L., Horváth, Z. J., Hubik, P., Kristofik, J., Mares, J. J., Gombia, E., Frigeri, P., Mosca, R., Franchi, S., Pécz, B. & Dobos, L., Dec 1 2003, In : Physica Status Solidi C: Conferences. 3, p. 975-980 6 p.

Research output: Contribution to journalConference article

3 Citations (Scopus)

Microstructure of GaN Layers Grown onto (001) and (111) GaAs Substrates by Molecular Beam Epitaxy

Tóth, L., Pécz, B., Czigány, Z., Amimer, K. & Georgakilas, A., Nov 20 2003, In : Materials Science Forum. 433-436, p. 999-1002 4 p.

Research output: Contribution to journalConference article

Misfit dislocations and surface morphology of lattice-mismatched GaAs/InGaAs heterostructures

Yastrubchak, O., Wosinski, T., Figielski, T., Lusakowska, E., Pecz, B. & Toth, A. L., Apr 1 2003, In : Physica E: Low-Dimensional Systems and Nanostructures. 17, 1-4, p. 561-563 3 p.

Research output: Contribution to journalConference article

27 Citations (Scopus)

Structural Properties of Nickel-Metal-Induced Laterally Crystallized Silicon Films

Miyasaka, M., Makihira, K., Béla Pecz, T. A., Pecz, B. & Stoemenos, J., Jan 1 2003, In : Solid State Phenomena. 93, p. 213-218 6 p.

Research output: Contribution to journalConference article

1 Citation (Scopus)
2001

Characterization of GaAlN/GaN superlattice heterostructures

Makkai, Z., Pécz, B., Di Forte-Poisson, M. A. & Huet, F., Jan 1 2001, In : Materials Science Forum. 353-356, p. 803-806 4 p.

Research output: Contribution to journalConference article

2 Citations (Scopus)

Correlation of the structural and optical properties of GaN grown on vicinal (0 0 1) GaAs substrates with the plasma-assisted MBE growth conditions

Georgakilas, A., Amimer, K., Tzanetakis, P., Hatzopoulos, Z., Cengher, M., Pecz, B., Czigany, Z., Toth, L., Baidakova, M. V., Sakharov, A. V. & Davydov, V. Y., Jul 1 2001, In : Journal of Crystal Growth. 227-228, p. 410-414 5 p.

Research output: Contribution to journalConference article

9 Citations (Scopus)

High dose implantation in 6H-SiC

Heera, V., Skorupa, W., Stoemenos, J. & Pécz, B., Mar 14 2001, In : Materials Science Forum. 353-356, p. 579-582 4 p.

Research output: Contribution to journalConference article

1 Citation (Scopus)

TEM investigation of Si implanted natural diamond

Pécz, B., Barna, Á., Heera, V., Fontaine, F. & Skorupa, W., Jan 1 2001, In : Materials Science Forum. 353-356, p. 199-202 4 p.

Research output: Contribution to journalConference article

4 Citations (Scopus)
2000

Consequences of high-dose, high temperature Al+ implantation in 6H-SiC

Stoemenos, J., Pécz, B. & Heera, V., Jan 1 2000, In : Materials Science Forum. 338, p. II/-

Research output: Contribution to journalConference article

Formation of precipitates in 6H-SiC after oxygen implantation and subsequent annealing

Pécz, B., Klettke, O., Pensl, G. & Stoemenos, J., Jan 1 2000, In : Materials Science Forum. 338, p. II/-

Research output: Contribution to journalConference article

1999

Influence of MBE growth temperature on the properties of cubic GaN grown directly on GaAs substrates

Georgakilas, A., Androulidaki, M., Tsagaraki, K., Amimer, K., Constantinidis, G., Pelekanos, N. T., Calamiotou, M., Czigany, Z. & Pecz, B., Nov 1 1999, In : Physica Status Solidi (A) Applied Research. 176, 1, p. 525-528 4 p.

Research output: Contribution to journalConference article

4 Citations (Scopus)

Modelling of the defect structure in GaN MOCVD thin films by X-ray diffraction

Huet, F., Di Forte-Poisson, M. A., Romann, A., Tordjman, M., Di Persio, J. & Pecz, B., May 6 1999, In : Materials Science and Engineering B: Solid-State Materials for Advanced Technology. 59, 1-3, p. 198-201 4 p.

Research output: Contribution to journalConference article

5 Citations (Scopus)
1990

Characterization and technology of contacts to GaAs

Mojzes, I., Kovacs, B., Veresegyhazy, R., Pecz, B. & Horvath, Z. J., Jan 1 1990, In : Vacuum. 40, 1-2, 1 p.

Research output: Contribution to journalConference article