• 6426 Citations
  • 40 h-Index
19952019
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Fingerprint Dive into the research topics where A. Gali is active. These topic labels come from the works of this person. Together they form a unique fingerprint.

  • 17 Similar Profiles
Vacancies Chemical Compounds
Defects Chemical Compounds
defects Physics & Astronomy
Diamond Chemical Compounds
silicon carbides Physics & Astronomy
Silicon Chemical Compounds
Silicon carbide Engineering & Materials Science
diamonds Physics & Astronomy

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Research Output 1995 2019

1 Citation (Scopus)

Ab initio theory of the nitrogen-vacancy center in diamond

Gali, A., Jan 1 2019, (Accepted/In press) In : Nanophotonics.

Research output: Contribution to journalReview article

Open Access
Diamond
Vacancies
Diamonds
Nitrogen
diamonds

Electrical Charge State Manipulation of Single Silicon Vacancies in a Silicon Carbide Quantum Optoelectronic Device

Widmann, M., Niethammer, M., Fedyanin, D. Y., Khramtsov, I. A., Rendler, T., Booker, I. D., Ul Hassan, J., Morioka, N., Chen, Y. C., Ivanov, I. G., Son, N. T., Ohshima, T., Bockstedte, M., Gali, A., Bonato, C., Lee, S. Y. & Wrachtrup, J., Jan 1 2019, (Accepted/In press) In : Nano Letters.

Research output: Contribution to journalArticle

Color centers
Silicon
optoelectronic devices
Silicon carbide
silicon carbides

First-principles study on photoluminescence quenching of divacancy in 4H SIC

Csóré, A., Magnusson, B., Son, N. T., Gällström, A., Ohshima, T., Ivanov, I. G. & Gali, A., Jan 1 2019, Silicon Carbide and Related Materials, 2018. Gammon, P. M., Shah, V. A., McMahon, R. A., Jennings, M. R., Vavasour, O., Mawby, P. A. & Padfield, F. (eds.). Trans Tech Publications Ltd, p. 714-717 4 p. (Materials Science Forum; vol. 963 MSF).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

structural influence coefficients
Quenching
Photoluminescence
quenching
photoluminescence