• 6189 Citations
  • 40 h-Index
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Fingerprint Dive into the research topics where A. Gali is active. These topic labels come from the works of this person. Together they form a unique fingerprint.

  • 18 Similar Profiles
Vacancies Engineering & Materials Science
Defects Engineering & Materials Science
defects Physics & Astronomy
silicon carbides Physics & Astronomy
Diamond Chemical Compounds
Silicon carbide Engineering & Materials Science
diamonds Physics & Astronomy
Silicon Chemical Compounds

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Research Output 1995 2019

First-principles study on photoluminescence quenching of divacancy in 4H SIC

Csóré, A., Magnusson, B., Son, N. T., Gällström, A., Ohshima, T., Ivanov, I. G. & Gali, A., Jan 1 2019, Silicon Carbide and Related Materials, 2018. Gammon, P. M., Shah, V. A., McMahon, R. A., Jennings, M. R., Vavasour, O., Mawby, P. A. & Padfield, F. (eds.). Trans Tech Publications Ltd, p. 714-717 4 p. (Materials Science Forum; vol. 963 MSF).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

structural influence coefficients
2 Citations (Scopus)

High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide

Nagy, R., Niethammer, M., Widmann, M., Chen, Y. C., Udvarhelyi, P., Bonato, C., Hassan, J. U., Karhu, R., Ivanov, I. G., Son, N. T., Maze, J. R., Ohshima, T., Soykal, Ö. O., Gali, A., Lee, S. Y., Kaiser, F. & Wrachtrup, J., Dec 1 2019, In : Nature communications. 10, 1, 1954.

Research output: Contribution to journalArticle

Open Access
optical control
Fourier Analysis

Identification of divacancy and silicon vacancy qubits in 6H-SiC

Davidsson, J., Ivády, V., Armiento, R., Ohshima, T., Son, N. T., Gali, A. & Abrikosov, I. A., Mar 18 2019, In : Applied Physics Letters. 114, 11, 112107.

Research output: Contribution to journalArticle

color centers
point defects